stk433-290-e Sanyo Semiconductor Corporation, stk433-290-e Datasheet - Page 8

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stk433-290-e

Manufacturer Part Number
stk433-290-e
Description
Thick-film Hybrid 3-channel Class Audio Power 3-channel Class Audio Power
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Evaluation Board Characteristics
[Thermal Design Example for STK433-290-E (R L = 6Ω)]
The thermal resistance, θc-a, of the heat sink for total power dissipation, Pd, within the hybrid IC is determined as
follows.
Condition 1: The hybrid IC substrate temperature, Tc, must not exceed 125°C.
Condition 2: The junction temperature, Tj, of each power transistor must not exceed 150°C.
However, the power dissipation, Pd, for the power transistors shall be allocated equally among the number of power
transistors.
The following inequalities result from solving equations (1) and (2) for θc-a.
Values that satisfy these two inequalities at the same time represent the required heat sink thermal resistance.
When the following specifications have been stipulated, the required heat sink thermal resistance can be determined
from formulas (1)' and (2)'.
0.001
0.01
100
1.0
0.1
140
120
100
10
80
60
40
20
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0.1
10
V CC =±33V
R L =6Ω
VG=30dB
3ch Drive
Rg=600Ω
Tc=25°C
Ch1 measurement
R L =6Ω
3ch Drive
VG=30dB
Rg=600Ω
Tc=25°C
Ch1 measurement
2 3
Pd × θc-a + Ta < 125°C ................................................................................................. (1)
Pd × θc-a + Pd/N × θj-c + Ta < 150°C .......................................................................... (2)
θc-a < (125 − Ta)/Pd ...................................................................................................... (1)'
θc-a < (150 − Ta)/Pd − θj-c/N ........................................................................................ (2)'
5 7
• Supply voltage
• Load resistance
• Guaranteed ambient temperature
1.0
20
Supply voltage, V CC - ±V
Output power, P O /ch - W
2 3
P O - V CC
THD - P O
5 7
10
30
2 3
5 7
Ta: Guaranteed ambient temperature for the end product
N: Number of power transistors
θj-c: Thermal resistance per power transistor
100
40
2 3
STK433-290-E
5 7
ITF02732
ITF02734
1000
50
V CC
R L
Ta
140
120
100
140
120
100
80
60
40
20
80
60
40
20
0
0
0.1
10
V CC =±33V
f=1kHz
R L =6Ω
VG=30dB
Rg=600Ω
Tc=25°C
3ch Drive
V CC =±33V
R L =6Ω
VG=30dB
Rg=600Ω
Tc=25°C
3ch Drive
Ch1 measurement
2 3
2 3
5 7
5 7
100
1.0
Output power, P O /ch - W
2 3
2 3
Frequency, f - Hz
Pd - P O
5 7
5 7
P O - f
THD=0.4%
THD=10%
10
1k
2 3
2 3
5 7
5 7
100
10k
No. A1630-8/13
2 3
2 3
5 7
5 7
ITF02733
ITF02735
1000
100k

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