SB1100-T3 WTE [Won-Top Electronics], SB1100-T3 Datasheet

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SB1100-T3

Manufacturer Part Number
SB1100-T3
Description
1.0A SCHOTTKY BARRIER DIODE
Manufacturer
WTE [Won-Top Electronics]
Datasheet
Features
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Mechanical Data
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Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
SB120 – SB1100
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
High Current Capability
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Case: DO-41, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
POWER SEMICONDUCTORS
WTE
Characteristic
@T
@T
@T
@I
L
A
= 100°C
A
F
= 100°C
= 25°C
= 1.0A
Symbol
T
V
V
V
R
R
j
R(RMS)
, T
I
V
I
FSM
RWM
V
RRM
I
RM
C
JA
JL
O
FM
R
STG
j
SB120 SB130 SB140 SB150 SB160 SB180 SB1100
1 of 4
SB120 – SB1100
20
14
0.50
110
@T
30
21
1.0A SCHOTTKY BARRIER DIODE
A
=25°C unless otherwise specified
A
40
28
Dim
A
B
C
D
-65 to +150
All Dimensions in mm
1.0
0.5
50
35
40
10
15
50
0.70
B
DO-41
25.4
4.06
0.71
2.00
Min
60
42
© 2006 Won-Top Electronics
80
0.864
80
56
Max
5.21
2.72
0.85
A
100
70
°C/W
Unit
Pb
mA
pF
°C
C
V
V
A
A
V

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SB1100-T3 Summary of contents

Page 1

... Operating and Storage Temperature Range Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. SB120 – SB1100 SB120 – SB1100 Symbol SB120 SB130 SB140 SB150 SB160 SB180 SB1100 V RRM V 20 RWM ...

Page 2

... SB120 – SB1100 © 2006 Won-Top Electronics ...

Page 3

... TAPE & BOX 255 150 BULK 198 Note: 1. Paper reel, white or gray color. Core material: plastic or metal. 2. Components are packed in accordance with EIA standard RS-296-E. SB120 – SB1100 TAPING SPECIFICATIONS = Polarity Band 1.2mm MAX = Device Number = Manufacturer’ ...

Page 4

... SB150 SB160-T3 SB160-TB SB160 SB180-T3 SB180-TB SB180 SB1100-T3 SB1100-TB SB1100 Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer ...

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