SST213 CALOGIC [Calogic, LLC], SST213 Datasheet - Page 2

• Manufacturer Part Number: SST213
• Description: FAST DMOS FET Switches N-Channel Enhancement-Mode
• Manufacturer: CALOGIC [Calogic, LLC]

ABSOLUTE MAXIMUM RATINGS (T
I
P
ELECTRICAL CHARACTERISTICS (T
NOTE 1: Pulse Test, 80 Sec, 1% Duty Cycle
Typical Performance Characteristics: See SD211-215 Series
CORPORATION
D
Breakdown Voltages
STATIC
B
B
B
B
I
I
I
V
r
DYNAMIC
g
C
C
C
C
t
t
t
T
D(OFF)
S(OFF)
GBS
ds(on)
d(ON)
r
(OFF)
fs
VDS
VSD
VDB
VSB
GS(th)
(gs + gd + gb)
(gd + db)
(gs + sb)
(dg)
SYMBOL
Continous Drain Current . . . . . . . . . . . . . . . . . . . . . 50mA
Power Dissipation (at or below Tc = +25
Linear Derating Factor3.6mW/
Parameter
V
V
V
V
V
V
V
GS
GB
GD
DS
SD
DB
SB
Drain-Source
Breakdown Voltage
Source-Drain Breakdown Voltage 10
Drain-Body
Breakdown Voltage
Source-Body
Breakdown Voltage
Drain-Source
OFF Current
Source-Drain
OFF Current
Gate-Body
Leakage Current
Gate Threshold Voltage
Drain-Source
ON Resistance
Common-Source
Foward Transcond.
Gate Node Capacitance
Drain Node Capacitance
Source Node Capacitance
Reverse Transfer Capacitance
Turn ON Delay Time
Rise Time
Turn OFF Time
CHARACTERISTICS
1
1
o
c
SST211
= +25
c
+30
+10
+30
+15
+25
-0.3
+25
+25
-15
-30
= +25
o
o
C) . . . . 360mW
C unless otherwise noted)
MIN TYP MAX MIN TYP MAX MIN TYP MAX
o
0.5
30
10
15
15
10
C unless otherwise noted)
SST211
1.0
2.4
3.5
0.7
0.2
0.6
1.3
0.3
0.8
35
25
50
30
12
10
SST213
2.0
3.5
1.5
4.0
0.5
1.0
1.0
10
10
10
70
45
+10
+10
+15
+15
+25
-0.3
+25
+25
-15
-15
0.1
10
10
15
15
10
SST213
0.2
0.6
2.4
1.3
3.5
0.3
0.7
0.8
25
50
30
12
10
T
T
j
S
2.0
3.5
1.5
4.0
0.5
1.0
1.0
10
10
10
70
45
Operating Junction Temperature Range . . -55 to +125
Storage Temperature Range . . . . . . . . . . . -55 to +150
SST215
+20
+20
+25
+25
+30
-0.3
+30
+30
-25
-25
0.1
20
20
25
25
10
SST215
0.2
0.6
1.0
2.4
1.3
3.5
0.3
0.7
0.8
25
50
30
12
10
SST211 / SST213 / SST215
2.0
3.5
1.5
4.0
0.5
1.0
1.0
10
10
10
70
45
ohms
UNIT
mS
nA
pF
ns
V
V
Unit
A
V
V
V
V
V
V
V
V
V
V
I
I
I
I
OPEN
I
V
V
V
V
V
V
V
V
V
V
f = 1KHz, V
V
V
f = 1MHz
V
R
D
D
S
D
S
DS
DS
SD
SD
GB
GB
DS
GS
GS
DS
DS
GS
DD
L
= 10nA, V
= 10 A, V
= 10 A, V
= 10nA, V
= 10nA, V
= 680, R
= 10V
= 20V
= 10V
= 20V
= V
= 10V, I
= 10V
= 25V
= 30V
= 5V
= 10V
= V
= 5V, V
TEST CONDITIONS
GS
BS
, I
= -15V
SB
G(ON)
G
GD
D
D
GB
GS
GS
GB
= 51
= 20mA
= 1 A, V
= 0
= V
= V
= V
= 0 Source
= 0 Drain OPEN
V
V
V
I
V
D
GS
GD
DB
SB
= 10V
= 1mA
BD
BS
BS
= V
= 0
= V
= V
= -5V
= -5V
= 0
SB
SB
BS
BD
= 0
= -5V
= 0
= -5V
o
o
C
C