S1226-18BK

Manufacturer Part NumberS1226-18BK
DescriptionSI PHOTO DIODE
ManufacturerHAMAMATSU [Hamamatsu Corporation]
S1226-18BK datasheet
 


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P H O T O D I O D E
Si photodiode
S1226 series
For UV to visible, precision photometry; suppressed IR sensitivity
Features
l
High UV sensitivity: QE 75 % (λ=200 nm)
l
Suppressed IR sensitivity
l
Low dark current
l
High reliability
λ
λ
λ
Applications
l
Analytical equipment
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Optical measurement equipment, etc.
lx

S1226-18BK Summary of contents

  • Page 1

    ... photodiode S1226 series For UV to visible, precision photometry; suppressed IR sensitivity Features l High UV sensitivity (λ=200 nm) l Suppressed IR sensitivity l Low dark current l High reliability λ λ λ Applications l Analytical equipment l Optical measurement equipment, etc. lx Ω Ω ...

  • Page 2

    ... Photo sensitivity temperature characteristic (Typ. Ta =25 ˚C) +1.5 +1.0 +0.5 0 -0.5 190 1000 KSPDB0106EA Dark current vs. reverse voltage = 100 100 0.01 KSPDB0107EA S1226 series Si photodiode (Typ. ) 400 600 800 1000 WAVELENGTH (nm) (Typ. Ta=25 ˚C) S1226-8BQ/BK S1226-5BQ/BK, -18BQ/BK S1226-44BQ/BK 0.1 1 REVERSE VOLTAGE (V) KSPDB0030EA 10 KSPDB0108EA ...

  • Page 3

    ... V 1 TΩ S1226-18BQ/BK, -5BQ/BK 100 GΩ 10 GΩ S1226-44BQ/BK 1 GΩ 100 MΩ 10 MΩ S1226-8BQ/BK 1 MΩ 100 kΩ 10 kΩ - AMBIENT TEMPERATURE (˚C) Si photodiode =10 mV KSPDB0109EA S1226 series ...

  • Page 4

    ... CONNECTED TO CASE KSPDA0113EB KSPDA0115EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K. S1226 series Si photodiode 9.1 ± 0.2 WINDOW 8.1 ± 0.1 5.9 ± ...