MC74HC03ANG ON Semiconductor, MC74HC03ANG Datasheet - Page 4

• Manufacturer Part Number: MC74HC03ANG
• Description: IC GATE NAND QUAD 2INPUT 14DIP
• Manufacturer: ON Semiconductor
• Series: 74HCr

Specifications of MC74HC03ANG

• Logic Type: NAND Gate with Open Drain
• Number Of Inputs: 2
• Number Of Circuits: 4
• Current - Output High, Low: 5.2mA, 5.2mA
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: 14-DIP (0.300", 7.62mm)
• Logic Family: HC
• Logical Function: NAND
• Number Of Elements: 4
• Low Level Output Current: 5.2mA
• Propagation Delay Time: 180ns
• Operating Supply Voltage (typ): 2.5/3.3/5V
• Operating Temp Range: -55C to 125C
• Package Type: PDIP
• Number Of Outputs: 1
• Output Type: Open Drain
• Technology: CMOS
• Mounting: Through Hole
• Pin Count: 14
• Operating Temperature Classification: Military
• Quiescent Current: 1uA
• Operating Supply Voltage (max): 6V
• Operating Supply Voltage (min): 2V
• Output Current: 5.2mA
• No. Of Inputs: 2
• Supply Voltage Range: 2V To 6V
• Logic Case Style: DIP
• No. Of Pins: 14
• Operating Temperature Range: -55°C To +125°C
• Filter Terminals: DIP
• Rohs Compliant: Yes
• Family Type: HC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MC74HC03ANGOS

NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
* Used to determine the no−load dynamic power consumption: P
DC CHARACTERISTICS
AC CHARACTERISTICS
Symbol
Symbol
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
t
t
C
C
V
t
t
V
I
PLZ
TLH
V
I
THL
C
PZL
I
CC
OZ
OL
out
PD
in
IH
IL
in
,
,
Semiconductor High−Speed CMOS Data Book (DL129/D).
Minimum High−Level Input Voltage
Maximum Low−Level Input Voltage
Maximum Low−Level Output
Voltage
Maximum Input Leakage Current
Maximum Quiescent Supply
Current (per Package)
Maximum Three−State Leakage
Current
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 2)
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
Maximum Input Capacitance
Maximum Three−State Output Capacitance
(Output in High−Impedance State)
Power Dissipation Capacitance (Per Buffer)*
Parameter
(Voltages Referenced to GND)
(C
L
= 50pF, Input t
Parameter
r
= t
f
V
|I
V
|I
V
|I
V
V
V
I
Output in High−Impedance State
V
V
out
= 6ns)
out
out
out
out
out
out
out
in
in
in
in
= V
= V
= V
= V
| ≤ 20mA
| ≤ 20mA
| ≤ 20mA
= 0mA
= 0.1V or V
= 0.1V or V
= 0.1V or V
= V
http://onsemi.com
IH
CC
CC
IL
CC
or V
or V
or GND
or GND
Condition
or GND
IH
IL
D
CC
CC
CC
= C
4
−0.1V
− 0.1V
− 0.1V
PD
|I
|I
|I
out
out
out
V
| ≤ 2.4mA
| ≤ 4.0mA
| ≤ 5.2mA
CC
2
f + I
CC
Typical @ 25°C, V
V
CC
V
V
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
4.5
6.0
3.0
4.5
6.0
6.0
6.0
6.0
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
V
V
CC
CC
. For load considerations, see Chapter 2 of the
−55 to 25°C
−55 to 25°C
1.50
2.10
3.15
4.20
0.50
0.90
1.35
1.80
0.26
0.26
0.26
±0.1
±0.5
120
0.1
0.1
0.1
1.0
45
24
20
75
27
15
13
10
10
Guaranteed Limit
Guaranteed Limit
8.0
CC
= 5.0 V, V
≤85°C
≤85°C
1.50
2.10
3.15
4.20
0.50
0.90
1.35
1.80
0.33
0.33
0.33
±1.0
±5.0
150
0.1
0.1
0.1
10
60
30
26
95
32
19
16
10
10
EE
= 0 V
≤125°C
≤125°C
1.50
2.10
3.15
4.20
0.50
0.90
1.35
1.80
0.40
0.40
0.40
±1.0
±10
180
110
0.1
0.1
0.1
40
75
36
31
36
22
19
10
10
Unit
Unit
mA
mA
mA
pF
pF
pF
ns
ns
V
V
V