atf-34143 Avago Technologies, atf-34143 Datasheet - Page 2

• Manufacturer Part Number: atf-34143
• Description: Low Noise Pseudomorphic Hemt In A Surface Mount Plastic Package
• Manufacturer: Avago Technologies

ATF-34143 Absolute Maximum Ratings
Product Consistency Distribution Charts
120
100
Notes:
7. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values
8. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based
2
Figure 3. NF @ 2 GHz, 4 V, 60 mA.
LSL=0.1, Nominal=0.47, USL=0.8
80
60
40
20
0
Figure 1. Typical/Pulsed I-V Curves
(V
anywhere within the upper and lower spec limits.
on production test requirements. Circuit losses have been de-embedded from actual measurements.
250
200
150
100
0
50
GS
Symbol
0
P
= -0.2 V per step)
P
T
V
in max
0
V
T
V
θ
I
STG
diss
GS
GD
CH
DS
D
jc
0.2
2
NF (dB)
-3 Std
0.4
Parameter
Drain - Source Voltage
Gate - Source Voltage
Gate Drain Voltage
Drain Current
Total Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance
V
DS
4
(V)
+3 Std
0.6
6
+0.6 V
–0.6 V
[2]
[6]
0 V
0.8
.
[2]
Cpk = 2.69167
Std = 0.04
9 Wafers
Sample Size = 450
8
[5]
[2]
[2]
[1]
[4]
[7]
Units
°C/W
dBm
mW
mA
°C
°C
V
V
V
120
100
120
100
Figure 2. OIP3 @ 2 GHz, 4 V, 60 mA.
LSL=29.0, Nominal=31.8, USL=35.0
Figure 4. Gain @ 2 GHz, 4 V, 60 mA.
LSL=16.0, Nominal=17.5, USL=19.0
80
60
40
20
80
60
40
20
0
0
29
16
-65 to 160
Maximum
Absolute
-3 Std
I
dss
725
160
165
5.5
17
-5
-5
16.5
30
[3]
-3 Std
31
17
OIP3 (dBm)
GAIN (dB)
17.5
32
+3 Std
Notes:
1. Operation of this device above any one of
2. Assumes DC quiescent conditions.
3. V
4. Source lead temperature is 25°C. Derate
5. Thermal resistance measured using 150°C
6. Under large signal conditions, V
33
18
these parameters may cause permanent
damage.
6 mW/°C for T
Liquid Crystal Measurement method.
swing positive and the drain current may
exceed I
as long as the maximum P
ratings are not exceeded.
GS
+3 Std
= 0 volts.
18.5
34
dss
. These conditions are acceptable
35
19
L
> 40°C.
Cpk = 1.37245
Std = 0.66
9 Wafers
Sample Size = 450
Cpk = 2.99973
Std = 0.15
9 Wafers
Sample Size = 450
diss
and P
GS
may
in max