T410-600BTR STMICROELECTRONICS [STMicroelectronics], T410-600BTR Datasheet - Page 5

• Manufacturer Part Number: T410-600BTR
• Description: 4A TRIACS
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
500
100
Fig. 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
Fig. 10: DPAK thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35µm).
90
80
70
60
50
40
30
20
10
10
0
1
0.01
0.1
0
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
Rth(j-a) (°C/W)
ITSM (A), I²t (A²s)
dI/dt limitation:
4
50A/µs
8
12
0.10
1.0
(dV/dt)c (V/µs)
16
tp (ms)
S(cm²)
20
24
10.0
1.00
T405
28
32
Tj initial=25°C
ITSM
I²t
T410
T435
36
DPAK
10.00
100.0
40
6
5
4
3
2
1
0
30.0
10.0
Fig. 7:
values).
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
1.0
0.1
0
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
ITM(A)
Tj=Tj max.
25
On-state characteristics
50
Tj(°C)
VTM(V)
75
100
T4 Series
(maximum
Rd= 120 m
Vto= 0.90 V
Tj max.:
125
5/8