ST2SA733

Manufacturer Part NumberST2SA733
DescriptionPNP Silicon Epitaxial Planar Transistor
ManufacturerSEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]
ST2SA733 datasheet
 


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ST 2SA733
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into five groups, R, O, Y,
P and L, according to its DC current gain. As
complementary type the NPN transistor ST 2SC945
is recommended.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (T
= 25
a
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code:
®
o
C)
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
P
tot
T
j
T
S
724)
TO-92 Plastic Package
Weight approx. 0.19g
Value
Unit
60
V
50
V
5
V
150
mA
250
mW
O
150
C
O
-55 to +150
C
Dated : 12/07/2002

ST2SA733 Summary of contents

  • Page 1

    ST 2SA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups and L, according to its DC current gain. As complementary type the NPN transistor ST 2SC945 ...

  • Page 2

    ST 2SA733 o Characteristics at T =25 C amb DC Current Gain at -V =6V, -I =1mA CE C Current Gain Group R Collector Base Breakdown Voltage at -I =100μA C Collector Emitter Breakdown Voltage at -I =10mA C Emitter ...

  • Page 3

    ST 2SA733 Total power dissipation vs. ambient temperature 300 250 200 150 100 Tamb ( C) Collector current vs. collector emitter voltage -100 -80 -60 -40 - -0.2 -0 hFE - ...

  • Page 4

    ST 2SA733 VCE(sat), VBE(sat VBE(sat) -0.1 VCE(sat) IC/IB=10 -0. Normalized h-parameters vs. collector emitter voltage 100 VCE=-6V, IE=1mA, f=1kHz hie=5.5k , hre=7.5x10 hfe=20s, hoe= hoe hre 1 hfe hie 0.1 ...