IRF7105Q9BF IRF [International Rectifier], IRF7105Q9BF Datasheet

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IRF7105Q9BF

Manufacturer Part Number
IRF7105Q9BF
Description
HEXFET POWER MOSFET
Manufacturer
IRF [International Rectifier]
Datasheet
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These HEXFET
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to
make this design an extremely efficient and reliable device
for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available
www.irf.com
θ
Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
in Tape & Reel.
®
Power MOSFET's in a Dual SO-8 package

G2
G1
S2
S1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
1
2
3
4
Top View
8
7
6
5
D1
D1
D2
D2
SO-8
DS(on)
DSS
D
1

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IRF7105Q9BF Summary of contents

Page 1

Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free l ® These HEXFET Power MOSFET Dual SO-8 package ...

Page 2

Notes:  ‚ N-Channel I ≤ ≤ SD ≤ ≤ P-Channel Ω  ƒ „ ≤ ≤ ≤ ≤ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Ω, Ω ƒ Ω Ω ƒ ƒ ƒ ...

Page 3

www.irf.com 3 ...

Page 4

Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors 90% 10 d(on D.U. ...

Page 5

www.irf.com 5 ...

Page 6

Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ -3mA I G Current Sampling Resistors 90% 10 d(on D.U. ...

Page 7

D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 www.irf.com Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration ...

Page 8

D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent 8 + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 9

SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & T OLERANCING PER AS ME ...

Page 10

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...

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