ptb20166 ETC-unknow, ptb20166 Datasheet
ptb20166
Manufacturer Part Number
ptb20166
Description
Watts, 675-925 Common Base Power Transistor
Manufacturer
ETC-unknow
Datasheet
1.PTB20166.pdf
(3 pages)
Description
The 20166 is an NPN, common base RF power transistor intended
for 24–30 Vdc class C operation from 675 to 925 MHz. Rated at 23
watts minimum output power, it may be used for both CW and pulsed
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Maximum Ratings
9/28/98
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at T flange = 25°C
Storage Temperature Range
Thermal Resistance (T flange = 70°C)
Above 25°C derate by
30
25
20
15
10
5
0
Typical Output Power vs. Input Power
0.0
0.5
Input Power (Watts)
1.0
Common Base RF Power Transistor
1.5
2.0
V
f = 925 MHz
CC
= 28 V
2.5
3.0
1
23 Watts, 675–925 MHz
Specified at 28 Volt, 925 MHz
Class C Characteristics
55% Min Collector Efficiency at 23 Watts
Gold Metallization
Silicon Nitride Passivated
Symbol
V
V
V
T
R
P
CER
CBO
EBO
STG
I
C
D
JC
Package 20209
–40 to +150
Value
PTB 20166
0.27
3.6
50
50
48
4
4
Watts
Unit
W/°C
°C/W
Vdc
Vdc
Vdc
Adc
°C
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ptb20166 Summary of contents
Page 1
Common Base RF Power Transistor Description The 20166 is an NPN, common base RF power transistor intended for 24–30 Vdc class C operation from 675 to 925 MHz. Rated at 23 watts minimum output power, it may be used for ...
Page 2
PTB 20166 Electrical Characteristics (100% Tested) Characteristic Conditions Breakdown Voltage mA Breakdown Voltage Breakdown Voltage ...
Page 3
Typical Performance Gain & Efficiency vs. Power Out Output Power (Watts) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 ...