IRF7607PBF IRF [International Rectifier], IRF7607PBF Datasheet

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IRF7607PBF

Manufacturer Part Number
IRF7607PBF
Description
HEXFET Power MOSFET
Manufacturer
IRF [International Rectifier]
Datasheet
Thermal Resistance
Description
New trench HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8™ package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
V
I
I
I
P
P
V
T
R
www.irf.com
l
l
l
l
l
l
l
D
D
DM
GS
J,
DS
D
D
θJA
Low Profile (<1.1mm)
Available in Tape & Reel
Lead-Free
@ T
@ T
Trench Technology
N-Channel MOSFET
Ultra Low On-Resistance
Very Small SOIC Package
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
®
power MOSFETs from International
Parameter
Parameter
GS
GS
ƒ
@ 4.5V
@ 4.5V
G
S
S
S
1
2
3
4
Top View
HEXFET
IRF7607PbF
8
7
6
5
-55 to + 150
Max.
Max.
0.014
Micro8™
± 12
70
6.5
5.2
1.8
1.2
D
D
D
D
20
50
A
A
®
R
DS(on)
Power MOSFET
V
DSS
= 0.030Ω
= 20V
PD - 95698
Units
Units
W/°C
°C/W
°C
V
A
V
1
9/2/04

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IRF7607PBF Summary of contents

Page 1

... 70°C Power Dissipation D A Linear Derating Factor V Gate-to-Source Voltage Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient θJA www.irf.com IRF7607PbF HEXFET Top View Micro8™ Max 4.5V GS 0.014 ± ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.50V 10 1.50V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...

Page 4

1MHz iss rss 1600 oss iss 1200 800 400 C oss C rss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL ...

Page 6

Id = 5.3A 0.020 2.0 3.0 4.0 5.0 V GS, Gate -to -Source Voltage ( V ) Fig 12. Typical On-Resistance Vs. Gate Voltage 6 0.10 0.08 0.06 0.04 0.02 0 6.0 7.0 8.0 Fig 13. ...

Page 7

Micro8 Package Outline Dimensions are shown in milimeters (inches 0.08 ...

Page 8

Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. NOTES : ...

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