SKR4 SEMIKRON [Semikron International], SKR4 Datasheet
SKR4
Manufacturer Part Number
SKR4
Description
DIODE
Manufacturer
SEMIKRON [Semikron International]
Datasheet
1.SKR4.pdf
(2 pages)
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Price
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SKR 12,4 Qu bond
I
V
Size: 12,4 mm x 12,4 mm
SKR 12,4 Qu bond
Features
• high current density due to mesa
• high surge current
• compatible to thick wire bonding
• compatible to all standard solder
Typical Applications
• uncontrolled rectifier bridges
© by SEMIKRON
F(DC)
DIODE
RRM
technology
processes
= 235 A
= 1600 V
SKR
Absolute Maximum Ratings
Symbol
V
I
I
I
T
Electrical Characteristics
Symbol
I
V
V
r
t
Thermal Characteristics
Symbol
T
T
T
T
R
Mechanical Characteristics
Symbol
Raster
size
Area total
Anode
Cathode
Wire bond
Package
Chips /
Package
F(AV)
2
FSM
R
T
rr
jmax
j
stg
solder
solder
RRM
t
F
(TO)
th(j-s)
Rev. 0 – 22.09.2009
T
T
T
10 ms
sin 180°
T
T
T
T
T
T
T
Conditions
Conditions
Conditions
10 min.
5 min.
soldered on 0,38 mm DCB, reference
point on copper heatsink close to the
chip
Conditions
j
s
j
j
j
j
j
j
j
j
= 25 °C, I
= 150 °C, 10 ms, sin 180°
= 25 °C, V
= 120 °C, V
= 25 °C, I
= 125 °C, I
= 125 °C
= 125 °C
= 25 °C, ± 1 A
= 80 °C, T
R
F
RRM
j
F
= 160 A
= 0.2 mA
= 150 °C
RRM
= 160 A
T
T
j
j
= 25 °C
= 150 °C
min.
min.
-40
-40
Al, diameter ≤ 500 µm
solderable (Ag/Ni)
bondable (Al)
12,4 x 12,4
Values
Values
153,76
26450
1600
3200
2300
typ.
typ.
0.27
190
150
tray
0.9
34
36
1
max.
max.
1.21
0.83
150
150
250
320
0.2
1.1
1.1
1.0
Unit
Unit
Unit
Unit
mm
K/W
mm
A
mA
mA
mΩ
pcs
°C
°C
°C
°C
°C
µs
V
A
A
A
V
V
V
2
s
2
1
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SKR4 Summary of contents
Page 1
SKR 12,4 Qu bond DIODE I = 235 A F(DC 1600 V RRM Size: 12 12,4 mm SKR 12,4 Qu bond Features • high current density due to mesa technology • high surge current • compatible ...
Page 2
SKR 12,4 Qu bond This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 2 Rev. 0 – 22.09.2009 © by SEMIKRON ...