ina-30311 Avago Technologies, ina-30311 Datasheet

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ina-30311

Manufacturer Part Number
ina-30311
Description
1 Ghz Low Noise Silicon Mmic Amplifier
Manufacturer
Avago Technologies
Datasheet
1 GHz Low Noise Silicon MMIC
Amplifier
Technical Data
Features
• Internally Biased, Single 3 V
• 3.5 dB NF
• 13 dB Gain
• Unconditionally Stable
Applications
• LNA or IF Amplifier for
Equivalent Circuit (Simplified)
5963-6679E
Supply (6 mA)
Cellular, Cordless, Special
Mobile Radio, PCS, ISM, and
Wireless LAN Applications
INPUT
RF
GROUND
SOT-143 Surface Mount
Package
Pin Connections and
Package Marking
INPUT
V
CC
6-140
OUTPUT
V
RF
CC
GND
OUTPUT
INA-30311
Description
Hewlett-Packard’s INA-30311 is a
Silicon monolithic amplifier for
applications to 1.0 GHz. Packaged
in a miniature SOT-143 package,
it requires very little board space.
The INA-30311 uses an internally
biased topology which eliminates
the need for external components
and provides decreased sensitiv-
ity to ground inductance.
The INA-30311 is designed with
an output impedance that varies
from near 200
frequencies to near 50
frequencies. This provides a
matching advantage for IF
circuits, as well as improved
power efficiency, making it
suitable for battery powered
designs.
The INA-30311 is fabricated using
HP’s 30 GHz f
Silicon bipolar process which
uses nitride self-alignment sub-
micrometer lithography, trench
isolation, ion implantation, gold
metallization, and polyimide
intermetal dielectric and scratch
protection to achieve superior
performance, uniformity, and
reliability.
MAX
at low
ISOSAT
at higher
TM

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ina-30311 Summary of contents

Page 1

... This provides a matching advantage for IF circuits, as well as improved power efficiency, making it suitable for battery powered designs. The INA-30311 is fabricated using HP’s 30 GHz f ISOSAT TM MAX Silicon bipolar process which uses nitride self-alignment sub- micrometer lithography, trench isolation, ion implantation, gold ...

Page 2

... INA-30311 Electrical Specifications Symbol Parameters and Test Conditions 2 G Power Gain (| Noise Figure P Output Power Gain Compression 1dB IP Third Order Intercept Point 3 VSWR Input VSWR I Device Current cc Group Delay d INA-30311 Typical Scattering Parameters Freq GHz Mag Ang dB 0.05 0.09 -1 16.12 0.10 0.09 -2 16.11 0.20 0.10 -6 16.12 0.30 0.13 -16 16.14 0.40 ...

Page 3

... INA-30311 Typical Performance 3.3 V 3 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 FREQUENCY (GHz) Figure 1. Power Gain vs. Frequency and Voltage -40 +25 + 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 FREQUENCY (GHz) Figure 4. Gain vs. Frequency and Temperature. 4.0 3.5 3.0 OUTPUT 2.5 2.0 1.5 INPUT 1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 FREQUENCY (GHz) Figure 7. Input and Output VSWR vs. Frequency ...

Page 4

... ICs. This application is shown in Figure 10. HIGH INPUT INA-30 IMPEDANCE STAGE Figure 10. INA-30311 Driving a High Input Impedance Stage. 6-143 • A second implementation, shown in Figure 11, uses a simple reactive network at the amplifier’s output to match the output impedance ...

Page 5

... Adequate grounding is needed to obtain maximum performance. The ground pin of the INA-30311 should be connected to directly to RF ground by using plated through holes (vias) near the package terminals. FR-4 or G-10 PCB material is a good choice for most low cost wireless applications ...

Page 6

... Figure 14. 50 Input/Output Example. INA-30311 Part Number Ordering Information Part Number Devices per Container INA-30311-TR1 3,000 INA-30311-BLK Package Dimensions 0.92 (0.036) 0.78 (0.031) PACKAGE MARKING CODE 1.40 (0.055) XXX 1.20 (0.047) 0.60 (0.024) 0.45 (0.018) 0.54 (0.021) 0.37 (0.015) 2.04 (0.080) 1.78 (0.070) TOP VIEW 1.02 (0.041) 3.06 (0.120) 0.85 (0.033) 2.80 (0.110) 0.10 (0.004) 0.013 (0.0005) ...

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