Si4416DYncr-DS Vishay Intertechnology, Si4416DYncr-DS Datasheet
Si4416DYncr-DS
Manufacturer Part Number
Si4416DYncr-DS
Description
Ds-spice Model For Si4416DYncr
Manufacturer
Vishay Intertechnology
Datasheet
1.SI4416DYNCR-DS.pdf
(3 pages)
CHARACTERISTICS
DESCRIPTION
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 70985
17-Apr-01
• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS.
model is extracted and optimized over the −55 to 125°C
temperature ranges under the pulsed 0-to-5V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
N-Channel 30-V (D-S) MOSFET
The subcircuit
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SPICE Device Model Si4416DY
Characteristics
gd
model. All model parameter values are optimized
Vishay Siliconix
www.vishay.com
1
Related parts for Si4416DYncr-DS
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Vishay General Semiconductor
Manufacturer:
Vishay Intertechnology
Datasheet:
Part Number:
Description:
Vishay General Semiconductor
Manufacturer:
Vishay Intertechnology
Datasheet:
Part Number:
Description:
Vishay General Semiconductor
Manufacturer:
Vishay Intertechnology
Datasheet:
Part Number:
Description:
Fast Switching Diode
Manufacturer:
Vishay Intertechnology, Inc.
Part Number:
Description:
Small Surface Mount Rectifier
Manufacturer:
Vishay Intertechnology, Inc.
Part Number:
Description:
Schottky Diodes
Manufacturer:
Vishay Intertechnology
Datasheet:
Part Number:
Description:
Silicon NPN Planar RF Transistor
Manufacturer:
Vishay Intertechnology
Datasheet:
Part Number:
Description:
Manufacturer:
Vishay Intertechnology
Datasheet:
Part Number:
Description:
P-channel 20-V (d-s) Mosfet
Manufacturer:
Vishay Intertechnology
Datasheet:
Part Number:
Description:
P-channel 20-V (d-s) Mosfet
Manufacturer:
Vishay Intertechnology
Datasheet:
Part Number:
Description:
N/p-channel 20-V (D-S) Pair
Manufacturer:
Vishay Intertechnology
Datasheet:
Part Number:
Description:
N/p-channel 30-V (D-S) Pair
Manufacturer:
Vishay Intertechnology
Datasheet:
Part Number:
Description:
Dual N-channel 30-V (D-S) MOSFET
Manufacturer:
Vishay Intertechnology
Datasheet:
Part Number:
Description:
N-channel 30-V (d-s) Mosfet
Manufacturer:
Vishay Intertechnology
Datasheet:
Si4416DYncr-DS Summary of contents
Page 1
N-Channel 30-V (D-S) MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. model is extracted and optimized over the ...
Page 2
SPICE Device Model Si4416DY Vishay Siliconix SPECIFICATIONS (T = 25°C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage Dynamic b Total Gate Charge b ...
Page 3
COMPARISON OF MODEL WITH MEASURED DATA (T Document Number: 70985 17-Apr-01 SPICE Device Model Si4416DY =25°C UNLESS OTHERWISE NOTED) J Vishay Siliconix www.vishay.com 3 ...