ptf10120 ETC-unknow, ptf10120 Datasheet

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ptf10120

Manufacturer Part Number
ptf10120
Description
Watts, 1.8-2.0 Goldmos Field Effect Transistor
Manufacturer
ETC-unknow
Datasheet
PTF 10120
120 Watts, 1.8–2.0 GHz
GOLDMOS
Description
The PTF 10120 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for CDMA and TDMA
applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output.
Nitride surface passivation and full gold metallization ensure excellent
device lifetime and reliability.
RF Specifications
All published data at T
Characteristic
Gain
Power Output at 1 dB Compression
Drain Efficiency
Load Mismatch Tolerance
(V
(V
(V
(V
—all phase angles at frequency of test)
DD
DD
DD
DD
= 28 V, P
= 28 V, I
= 28 V, P
= 28 V, P
150
120
90
60
30
Typical Output Power vs. Input Power
0
0
DQ
OUT
OUT
OUT
Output Power
3
= 1.2 A Total, f = 1.99 GHz)
CASE
= 30 W, I
= 120 W, I
= 60 W, I
Input Power (Watts)
(100% Tested)
6
= 25°C unless otherwise indicated.
Field Effect Transistor
DQ
DQ
DQ
9
= 1.2 A Total, f = 1.99 GHz)
= 1.2 A Total, f = 1.99 GHz
V
I
f = 1990 MHz
DQ
= 1.2 A Total, f = 1.99 GHz)
DD
= 1.2 A Total
12
= 28 V
Efficiency
15
18
100
80
60
40
20
0
1
Symbol
P-1dB
G
ps
D
INTERNALLY MATCHED
Guaranteed Performance at 1.99 GHz, 28 V
- Output Power = 120 Watts Min
- Power Gain = 11 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
Min
120
10
Package 20250
Typ
11
40
Max
10:1
Units
Watts
dB
%

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ptf10120 Summary of contents

Page 1

PTF 10120 120 Watts, 1.8–2.0 GHz GOLDMOS ™ Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz rated at ...

Page 2

PTF 10120 Electrical Characteristics Characteristic (per side) Drain-Source Breakdown Voltage V Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance Maximum Ratings Parameter (1) Drain-Source Voltage (1) Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Above 25°C derate ...

Page 3

Power Gain vs. Output Power 1200 600 300 Output Power (Watts) Output Power vs. Supply Voltage 180 160 140 ...

Page 4

PTF 10120 Test Circuit Test Circuit Block Diagram for f = 2.0 GHz Q1 PTF 10120 .048 @ 2.0 GHz 5, 6 .18 @ 2.0 GHz 7, 8 .097 @ 2.0 GHz 9, 10 .129 @ ...

Page 5

Parts Layout (not to scale) Artwork (1 inch ) Ericsson Microelectronics 1-877-GOLDMOS (465-3667) United States RF Power Products +46 8 757 4700 International Morgan Hill, CA 95037 USA e-mail: rfpower@ericsson.com www.ericsson.com\rfpower Specifications subject to change without notice. L3 © 1998 ...

Page 6

Notes: 6 ...

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