ptf10120 ETC-unknow, ptf10120 Datasheet
ptf10120
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ptf10120 Summary of contents
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PTF 10120 120 Watts, 1.8–2.0 GHz GOLDMOS ™ Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz rated at ...
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PTF 10120 Electrical Characteristics Characteristic (per side) Drain-Source Breakdown Voltage V Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance Maximum Ratings Parameter (1) Drain-Source Voltage (1) Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Above 25°C derate ...
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Power Gain vs. Output Power 1200 600 300 Output Power (Watts) Output Power vs. Supply Voltage 180 160 140 ...
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PTF 10120 Test Circuit Test Circuit Block Diagram for f = 2.0 GHz Q1 PTF 10120 .048 @ 2.0 GHz 5, 6 .18 @ 2.0 GHz 7, 8 .097 @ 2.0 GHz 9, 10 .129 @ ...
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Parts Layout (not to scale) Artwork (1 inch ) Ericsson Microelectronics 1-877-GOLDMOS (465-3667) United States RF Power Products +46 8 757 4700 International Morgan Hill, CA 95037 USA e-mail: rfpower@ericsson.com www.ericsson.com\rfpower Specifications subject to change without notice. L3 © 1998 ...
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Notes: 6 ...