hpmx-5001 ETC-unknow, hpmx-5001 Datasheet - Page 2

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hpmx-5001

Manufacturer Part Number
hpmx-5001
Description
1.5-2.5 Upconverter/ Downconverter
Manufacturer
ETC-unknow
Datasheet

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HPMX-5001 Absolute Maximum Ratings
HPMX-5001 Guaranteed Electrical Specifications
Unless otherwise noted, all parameters are guaranteed under the following conditions: V
results are based upon use of networks shown in test board schematic diagram (see Figure 28). Typical
values are for V
Notes:
1. 50
2. Signal injected into P3 in Figure 28 is -12.5 dBm.
3. DIV output AC coupled into a 2 k || 10 pF load. See test board schematic diagram, Figure 28.
Symbol
matching network from 750
conversion gain figure. See Figure 28.
V
Voltage at Any Pin
Power Dissipation
RF Input Power
Junction Temperature
Storage Temperature
V
P
I
G
CC
DIV
CC
out
RF source, 100 MHz < I
C
Supply Voltage
Parameter
Receive Conversion Gain
Transmitter Power Output
Device Supply Current
DIV Single-Ended Swing
CC
= 3.0 V, T
[2,3]
[4]
F
A
< 300 MHz, 1.89 GHz RF. There is a 750
Parameters and Test Conditions
to 50
= 25 C.
is used for this measurement. Insertion loss of the matching network is included in the net
Standby Mode (with DIVMC Set High)
[3]
[1]
-0.2 V
-0.2 V
-55 C
Min.
[1]
7-91
V
CC
600 mW
2:1 output VSWR
15 dBm
+150 C
+125 C
Max.
Transmit Mode
+ 0.2 V
8 V
Receive Mode
resistor on chip between RXIF and RXIFB (pins 3 and 4). A
Synth Mode
Input
[2]
Notes:
1. Operation of this device in excess of
2. T
3. Derate at 10 mW/ C for T
4. Except CMOS logic inputs – see
any of these parameters may cause
permanent damage.
Summary Characterization Information
table.
Thermal Resistance
Units
dBm
CASE
mA
mA
mA
V
dB
PP
A
= 25 C.
jc
Min.
= 100 C/W
CC
0.7
12
0
= 3.0 V. Test
Typ.
14
64
43
15
2
1
1
[2]
CASE
:
> 90 C.
Max.
80
54
19
50

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