Si4946EY-DS Vishay Intertechnology, Si4946EY-DS Datasheet

Si4946EY-DS

Manufacturer Part Number

Si4946EY-DS

Description

Ds-spice Model For Si4946EY

Manufacturer

Vishay Intertechnology

Datasheet

1.SI4946EY-DS.pdf (3 pages)

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CHARACTERISTICS

DESCRIPTION

SUBCIRCUIT MODEL SCHEMATIC

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate

data sheet of the same number for guaranteed specification limits.

Document Number: 71564

05-Nov-99

• N-Channel Vertical DMOS

• Macro Model (Subcircuit Model)

• Level 3 MOS

The attached spice model describes the typical electrical

characteristics of the n-channel vertical DMOS.

model schematic is extracted and optimized over the −55 to 125°C

temperature ranges under the pulsed 0-to-5V gate drive. The

saturated output impedance is best fit at the gate bias near the

threshold voltage.

Dual N-Channel 50-V (D-S) Dual MOSFET

The subcircuit

• Apply for both Linear and Switching Application

• Accurate over the −55 to 125°C Temperature Range

• Model the Gate Charge, Transient, and Diode Reverse Recovery

A novel gate-to-drain feedback capacitance network is used to model

the gate charge characteristics while avoiding convergence difficulties

of the switched C

to provide a best fit to the measured electrical data and are not

intended as an exact physical interpretation of the device.

SPICE Device Model Si4946EY

Characteristics

model. All model parameter values are optimized

Vishay Siliconix

www.vishay.com

Related parts for Si4946EY-DS

Si4946EY-DS Summary of contents

Page 1

... Document Number: 71564 05-Nov-99 SPICE Device Model Si4946EY • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery ...

Page 2

SPICE Device Model Si4649EY Vishay Siliconix SPECIFICATIONS (T = 25°C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic b Total Gate Charge ...

Page 3

... COMPARISON OF MODEL WITH MEASURED DATA (T Document Number: 71564 05-Nov-99 SPICE Device Model Si4946EY =25°C UNLESS OTHERWISE NOTED) J Vishay Siliconix www.vishay.com 3 ...

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