Si4967DY-DS Vishay Intertechnology, Si4967DY-DS Datasheet
Si4967DY-DS
Manufacturer Part Number
Si4967DY-DS
Description
Ds-spice Model For Si4967DY
Manufacturer
Vishay Intertechnology
Datasheet
1.SI4967DY-DS.pdf
(3 pages)
CHARACTERISTICS
DESCRIPTION
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 71571
25-Feb-99
• P-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
The attached spice model describes the typical electrical
characteristics of the p-channel vertical DMOS.
model schematic is extracted and optimized over the −55 to 125°C
temperature ranges under the pulsed 0-to-5V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
Dual P-Channel 1.8-V (G-S) MOSFET
The subcircuit
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device(s).
SPICE Device Model Si4967DY
Characteristics
gd
model. All model parameter values are optimized
Vishay Siliconix
www.vishay.com
1
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Si4967DY-DS Summary of contents
Page 1
... Document Number: 71571 25-Feb-99 SPICE Device Model Si4967DY • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery ...
Page 2
... SPICE Device Model Si4967DY Vishay Siliconix SPECIFICATIONS (T = 25°C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic b Total Gate Charge b Gate-Source Charge b Gate-Drain Charge b Turn-On Delay Time b Rise Time ...
Page 3
... COMPARISON OF MODEL WITH MEASURED DATA (T Document Number: 71571 25-Feb-99 SPICE Device Model Si4967DY =25°C UNLESS OTHERWISE NOTED) J Vishay Siliconix www.vishay.com 3 ...