am55-0003 ETC-unknow, am55-0003 Datasheet - Page 6

• Manufacturer Part Number: am55-0003
• Description: 250 Mw Power Amplifier With T/r And Diversity Switches 2.4 - 2.5 Ghz
• Manufacturer: ETC-unknow

C24
Recommended PCB Configuration
250 mW Power Amplifier with T/R and Diversity Switches
Specifications Subject to Change Without Notice
M/A-COM Inc.
External Circuitry
C16
C16
C23
C15
C14
C7
C9
C3
COMMON
C4
ANT CTRL
RX OUT
ANT
ANT 2
ANT 1
V
V
DD1
G2
V
G1
C8
R3
R3
R1
R4
Layout View
0.0690 in.
R6
C25
1011 Pawtucket Boulevard, Lowell, MA 01853 USA
C22
C10
C17
R2
R2
C11
R2
R5
C12
R5
C10
C5
C25
R3
C13
R6
C13
C12
C11
C5
0.625 in.
1
2
3
4
5
6
7
8
9
10
11
12
14
13
14
0.975 in.
6
28
27
26
25
24
23
22
21
20
19
18
17
16
15
The PCB dielectric between RF traces and RF ground layers
should be chosen to reduce RF discontinuities between 50-
lines and package pins. M/A-COM recommends an FR-4
dielectric thickness of 0.008 in. (0.2 mm), yielding a 50- line
width of 0.015 in. (0.38 mm). The recommended metalization
thickness is 1 oz. copper.
Shaded traces are vias to DC routing layer and traces on DC
routing layer.
Biasing Procedure
The AM55-0003 requires that V
V
not followed. All FETs in the PA will draw excessive current
and damage internal circuitry.
External Circuitry Parts List
All off-chip components are low-cost surface mount components
obtainable from multiple sources. (0.020 in. x 0.040 in. or
0.030 in. x 0.050 in.)
DD
R4
C1 - C6
C23 - C24
C7 - C16
C17 - C22
R1, R6
R3, R5
R2
bias. Permanent damage may occur if this procedure is
Label
C9
C4
C3
C14
C8
C7
C16
C15
Cross-Section View
C21
C20
C19
C18
R4
C23
22 pF
22 pF
1000 pF
0.01 µF
1.5 k
5 k
12 k
1 k
Value
R1
R1
C24
DC Routing
Customer Defined
RF Traces + Components
RF Ground
GG
bias be applied prior to any
Telephone: [phone]
(T/R,ANT)
V
V
V
T/R CTRL
V
Bypass (GHz)
DC Block
Bypass (MHz)
Bypass (kHz)
FET Gate
Divider Network
V
G3
DD
DD2
RF IN
RF OUT
DD3
DD
Purpose
(T/R ANT)
AM55-0003
V 2.0