s808200mg Roithner LaserTechnik GmbH, s808200mg Datasheet

s808200mg

Manufacturer Part Number

s808200mg

Description

High Power Infrared Laser Diode

Manufacturer

Roithner LaserTechnik GmbH

Datasheet

1.S808200MG.pdf (1 pages)

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S808200MG

Structure: multi mode, 30 x 1 µm² emitting aperture

Lasing wavelength: typ. 806 nm

Output power: 200 mW cw

Package: 5.6 mm, TO-18

PIN CONNECTION:

Optical Output Power

LD Reverse Voltage

PD Reverse Voltage

Operation Case Temperature

Storage Temperature

Threshold Current

Operation Current

Operating Voltage

Lasing Wavelength

Beam Divergence

Parallel Deviation Angle

Perpendicular Deviation Angle

Emission Point Accuracy

Slope Efficiency

Monitor Current

Absolute Maximum Ratings (Tc = 25°C)

Optical-Electrical Characteristics (Tc = 25°C)

High Power Infrared Laser Diode

CHARACTERISTIC

ROITHNER LASERTECHNIK

SCHOENBRUNNER STRASSE 7, 1040 VIENNA, AUSTRIA

office@roithner-laser.com

TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44

1) Laser diode cathode

2) Laser diode anode and photodiode cathode

3) Photodiode anode

∆X,∆Y,∆Z

SYMBOL

∆θ

⊥

TECHNICAL DATA

SYMBOL

TEST CONDITION

63 mW – 190 mW

R(PD)

R(LD)

STG

= 200 mW

www.roithner-laser.com

-10 .. +40

-40 .. +85

RATING

250

MIN

803

TYP

300

806

±80

1.9

0.9

2.5

MUST BE COOLED!

LASERDIODE

NOTE!

MAX

110

350

810

2.2

±3

UNIT

°C

mW/mA

UNIT

µm

20041015

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