p5506bvg ETC-unknow, p5506bvg Datasheet

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p5506bvg

Manufacturer Part Number
p5506bvg
Description
N-channel Logic Level Enhancement Mode Field Effect Transistor
Manufacturer
ETC-unknow
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
P5506BVG
Manufacturer:
NIKO
Quantity:
20 000
Company:
Part Number:
P5506BVG
Quantity:
10 000
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (T
THERMAL RESISTANCE RATINGS
1
2
ELECTRICAL CHARACTERISTICS (T
PRODUCT SUMMARY
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source
Resistance
Forward Transconductance
Pulse width limited by maximum junction temperature.
Duty cycle ≤ 1%
Drain-Source Voltage
Gate-Source Voltage
Pulsed Drain Current
Junction & Storage Temperature Range
Continuous Drain Current
Power Dissipation
Junction-to-Ambient
V
(BR)DSS
60
THERMAL RESISTANCE
PARAMETER
1
PARAMETERS/TEST CONDITIONS
R
55mΩ
DS(ON)
1
1
On-State
N-Channel Logic Level Enhancement
1
5.5A
I
D
C
SYMBOL
= 25 °C Unless Otherwise Noted)
C
V
R
V
= 25 °C, Unless Otherwise Noted)
I
(BR)DSS
Mode Field Effect Transistor
I
I
D(ON)
DS(ON)
GS(th)
GSS
DSS
g
fs
T
T
T
T
C
C
C
C
SYMBOL
= 25 °C
= 70 °C
= 25 °C
= 70 °C
R
θJA
V
G
STATIC
DS
= 40V, V
V
V
V
V
TEST CONDITIONS
V
V
V
V
DS
DS
GS
GS
DS
DS
GS
DS
1
= V
= 0V, V
= 4.5V, I
= 0V, I
= 48V, V
= 5V, V
= 10V, I
= 10V, I
S
D
TYPICAL
GS
GS
SYMBOL
, I
T
= 0V, T
D
V
D
V
j
GS
I
, T
P
GS
I
DM
D
= 250µA
D
D
DS
GS
D
= 250µA
GS
D
= ±20V
= 5.5A
= 5.5A
stg
= 4.5A
= 10V
= 0V
J
= 55 °C
MAXIMUM
-55 to 150
50
LIMITS
±20
MIN
5.5
4.5
2.5
1.3
60
20
1.0
60
20
4
5,6,7,8 :DRAIN
1,2,3 :SOURCE
LIMITS
TYP MAX
1.5
55
42
14
P5506BVG
SEP-30-2004
Lead-Free
:GATE
UNITS
°C / W
±100 nA
2.5
10
75
55
1
SOP-8
UNITS
°C
W
V
V
A
UNIT
µA
V
A
S

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p5506bvg Summary of contents

Page 1

... 0V, V GSS 48V DSS V = 40V 5V, V D(ON 4.5V DS(ON 10V 10V P5506BVG 4 5,6,7,8 :DRAIN 1,2,3 :SOURCE SYMBOL LIMITS ± -55 to 150 j stg MAXIMUM 50 LIMITS MIN TYP MAX = 250µ ...

Page 2

... Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. 2 Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH “P5506BVG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. Mode Field Effect Transistor DYNAMIC C ...

Page 3

... N-Channel Logic Level Enhancement NIKO-SEM Mode Field Effect Transistor Body Diode Forward Voltage Variation with Source Current and Temperature 100 0.1 0.01 0.001 0.0001 0 0 Body Diode Forward Voltage(V) 3 P5506BVG SOP-8 Lead-Free T = 125° 25° C -55° C 0.4 0.6 0.8 1.0 1.2 SD SEP-30-2004 ...

Page 4

... N-Channel Logic Level Enhancement NIKO-SEM Mode Field Effect Transistor 4 P5506BVG SOP-8 Lead-Free SEP-30-2004 ...

Page 5

... N-Channel Logic Level Enhancement NIKO-SEM SOIC-8(D) MECHANICAL DATA Dimension Min. A 4.8 B 3.8 C 5 1.35 G 0.1 D Mode Field Effect Transistor mm Dimension Typ. Max. 4.9 5.0 H 3.9 4.0 I 6.0 6.2 J 0.445 0.51 K 1.27 L 1.55 1.75 M 0.175 0. P5506BVG mm Min. Typ. 0.5 0.715 0.18 0.254 0.22 0° 4° SOP-8 Lead-Free Max. 0.83 0.25 8° SEP-30-2004 ...

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