UPD43256BGW-70X-9JL NEC [NEC], UPD43256BGW-70X-9JL Datasheet
UPD43256BGW-70X-9JL
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UPD43256BGW-70X-9JL Summary of contents
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Description The PD43256B high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM. The PD43256B extended-operating-temperature version of the PD43256B (X version : T C). And A and B versions are ...
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Ordering Information Part number PD43256BGW-70X-9JL 28-PIN PLASTIC TSOP(I) PD43256BGW-85X-9JL (8x13.4) (Normal bent) PD43256BGW-A85X-9JL PD43256BGW-A10X-9JL PD43256BGW-A12X-9JL PD43256BGW-B10X-9JL PD43256BGW-B12X-9JL PD43256BGW-B15X-9JL PD43256BGW-70X-9KL 28-PIN PLASTIC TSOP(I) PD43256BGW-85X-9KL (8x13.4) (Reverse bent) PD43256BGW-A85X-9KL PD43256BGW-A10X-9KL PD43256BGW-A12X-9KL PD43256BGW-B10X-9KL PD43256BGW-B12X-9KL PD43256BGW-B15X-9KL 2 Package Access time Operating supply Operating ...
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Pin Configurations (Marking Side) /xxx indicates active low signal. /OE 1 A11 A13 5 / A14 8 A12 A10 ...
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Block Diagram A0 Address buffer A14 I/O1 I/O8 /CS /OE / GND Truth Table /CS /OE / Remark : Row Memory cell array ...
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Electrical Specifications Absolute Maximum Ratings Parameter Supply voltage Input / Output voltage Operating ambient temperature Storage temperature Note –3.0 V (MIN.) (Pulse width : 50 ns) Caution Exposing the device to stress above those listed in Absolute Maximum Rating could ...
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DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) (1/2) Parameter Symbol Input leakage current I LI I/O leakage current I LO • Operating supply current I CCA1 I CCA2 I CCA3 Standby supply current SB1 High level ...
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DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) (2/2) Parameter Symbol Input leakage current I/O leakage current I/O / Operating supply ...
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AC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) AC Test Conditions [ PD43256B-70X, PD43256B-85X] Input Waveform (Rise and Fall Time 2.4 V 0.6 V Output Waveform Output Load AC characteristics should be measured with the following output load conditions. (t ...
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Read Cycle (1/2) Parameter • Read cycle time Address access time /CS access time /OE access time Output hold from address change /CS to output in low impedance /OE to output in low impedance /CS to output in high impedance ...
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Read Cycle Timing Chart Address (Input) /CS (Input) /OE (Input) I/O (Output) Remark In read cycle, /WE should be fixed to high level ACS t CLZ OLZ High impedance Data Sheet ...
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Write Cycle (1/2) Parameter • Write cycle time /CS to end of write Address valid to end of write Write pulse width Data valid to end of write Data hold time Address setup time Write recovery time /WE to output ...
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Write Cycle Timing Chart 1 (/WE Controlled) Address (Input) /CS (Input) t /WE (Input) I/O (Input / Output) Indefinite data out Cautions 1. /CS or /WE should be fixed to high level during address transition. 2. When I/O pins are ...
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Write Cycle Timing Chart 2 (/CS Controlled) Address (Input) /CS (Input) /WE (Input) High impedance I/O (Input) Cautions 1. /CS or /WE should be fixed to high level during address transition. 2. When I/O pins are in the output state, ...
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Low V Data Retention Characteristics (T CC Parameter Data retention supply voltage Data retention supply current Chip deselection to data retention mode Operation recovery time Note C Data Retention ...
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Package Drawings 28-PIN PLASTIC TSOP(I) (8x13. NOTES 1. Each lead centerline is located within 0. its true position (T.P.) at maximum material condition. 2. "A" excludes mold flash. (Includes mold flash : 8.4mm ...
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PLASTIC TSOP(I) (8x13. NOTE 1. Each lead centerline is located within 0. its true position (T.P.) at maximum material condition. 2. "A" excludes mold flash. (Includes mold flash : 8.4mm MAX.) ...
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Recommended Soldering Conditions Please consult with our sales offices for soldering conditions of the PD43256B-X. Types of Surface Mount Device PD43256BGW-xxX-9JL : 28-PIN PLASTIC TSOP(I) (8x13.4) (Normal bent) PD43256BGW-xxX-9KL : 28-PIN PLASTIC TSOP(I) (8x13.4) (Reverse bent) PD43256BGW-AxxX-9JL : 28-PIN PLASTIC ...
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Data Sheet M11012EJ4V0DS PD43256B-X ...
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NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation ...
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The information in this document is current as of December, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...