M2012Y MICRO-ELECTRONICS [Micro Electronics], M2012Y Datasheet
M2012Y
Manufacturer Part Number
M2012Y
Description
HIGH BRIGHTNESS AMBER SURFACE LIGHTING
Manufacturer
MICRO-ELECTRONICS [Micro Electronics]
Datasheet
1.M2012Y.pdf
(2 pages)
FEATURES:
GaAsP/GaP Amber Chip
Amber Diffused Lens
Low Power Requirements
Wide Viewing Angle
ABSOLUTE MAXIMUM RATINGS
Power dissipation/Chip
Continuous Forward Current/Chip
Peak Forward Current/Chip
(*Pulse Width = 1ms , Duty Ratio = 1/10)
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Solder Temperature (1/16 Inch from body)
Maximum Soldering Time(
ELECTRO-OPTICAL CHARACTERISTICS
MICRO
Forward Voltage/Chip
Reverse Current/Chip
Peak Wavelength
Dominant Wavelength
Spectral Line Half Width
Luminous Intensity
PARAMETER
≤
260°C)
SYMBOL
V
Δλ
λp
λd
IV
I
R
F
(Ta=25°C)
Pd
IF
*IFP
VR
Topr
Tstg
MIN
5
(Ta=25°C)
TYP
589
590
2.1
35
15
MAX
100
2.8
UNIT
mcd
μA
nm
nm
nm
V
SURFACE LIGHTING
HIGH BRIGHTNESS
CONDITIONS
I
F
=10mA/Chip
I
I
I
I
F
F
F
F
V
=20mA
=20mA
=20mA
=20mA
R
M2012Y
-20 to +80°C
-25 to +85°C
=5V
Sheet 1 of 2
16/5/2005
AMBER
100mA
60mW
20mA
260℃
5 sec
5V
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M2012Y Summary of contents
Page 1
... Luminous Intensity (Ta=25° *IFP VR Topr Tstg (Ta=25°C) SYMBOL MIN TYP V 2 λp 589 λd 590 Δλ M2012Y HIGH BRIGHTNESS SURFACE LIGHTING -20 to +80°C -25 to +85°C UNIT MAX CONDITIONS V I =20mA 2.8 F μA 100 V = =20mA =20mA F ...
Page 2
... M2012Y 16/5/2005 Sheet ...