DS1250WP-150-IND DALLAS [Dallas Semiconductor], DS1250WP-150-IND Datasheet

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DS1250WP-150-IND

Manufacturer Part Number
DS1250WP-150-IND
Description
3.3V 4096k Nonvolatile SRAM
Manufacturer
DALLAS [Dallas Semiconductor]
Datasheet
FEATURES
www.dalsemi.com
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Replaces 512k x 8 volatile static RAM,
EEPROM or Flash memory
Unlimited write cycles
Low-power CMOS
Read and write access times as fast as 150 ns
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
Optional industrial temperature range of
-40 C to +85 C, designated IND
JEDEC standard 32-pin DIP package
New PowerCap Module (PCM) package
-
-
-
-
Directly surface-mountable module
Replaceable snap-on PowerCap provides
lithium backup battery
Standardized pinout for all nonvolatile
SRAM products
Detachment feature on PCM allows easy
removal using a regular screwdriver
1 of 11
3.3V 4096k Nonvolatile SRAM
PIN ASSIGNMENT
PIN DESCRIPTION
A0 - A18
DQ0 - DQ7
V
GND
NC
CE
WE
OE
GND
CC
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
A15
A16
V
WE
NC
NC
OE
CE
CC
32-Pin ENCAPSULATED PACKAGE
34-PIN POWERCAP MODULE (PCM)
GND
DQ0
DQ1
DQ2
A16
A14
A12
A18
(USES DS9034PC POWERCAP)
A7
A6
A5
A4
A3
A2
A1
A0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
740-mil EXTENDED
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
GND V
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+3.3V)
- Ground
- No Connect
BAT
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
DS1250W
V
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
CC
111999
A18
A17
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0

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DS1250WP-150-IND Summary of contents

Page 1

FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access ...

Page 2

DESCRIPTION The DS1250W 3.3V 4096k Nonvolatile SRAM is a 4,194,304-bit, fully static, nonvolatile SRAM organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors V occurs, the lithium ...

Page 3

DS9034PC PowerCap. The PowerCap Module package design allows a DS1250W PCM device to be surface mounted without subjecting its lithium backup ...

Page 4

AC ELECTRICAL CHARACTERISTICS PARAMETER Read Cycle Time Access Time to Output Valid OE to Output Valid Output Active OE CE Output High Z from Deselection Output Hold from Address Change Write Cycle Time Write Pulse Width Address ...

Page 5

WRITE CYCLE 1 SEE NOTES AND DS1250W ...

Page 6

WRITE CYCLE 2 SEE NOTES AND 12 POWER-DOWN/POWER-UP CONDITION DS1250W ...

Page 7

POWER-DOWN/POWER-UP TIMING PARAMETER V Fail Detect to and slew from slew from Valid to and Inactive Valid to End of ...

Page 8

DC TEST CONDITIONS Outputs Open Cycle = 200 ns for operating current All voltages are referenced to ground ORDERING INFORMATION DS1250 SSS - III DS1250W NONVOLATILE SRAM, 32-PIN 740 MIL EXTENDED DIP MODULE AC TEST CONDITIONS Output ...

Page 9

DS1250W NONVOLATILE SRAM, 34-PIN POWERCAP MODULE PKG DIM MIN A 0.920 B 0.980 0.052 E 0.048 F 0.015 G 0.020 DS1250W INCHES NOM MAX 0.925 0.930 0.985 0.990 - 0.080 0.055 0.058 0.050 0.052 ...

Page 10

DS1250W NONVOLATILE SRAM, 34-PIN POWERCAP MODULE WITH POWERCAP ASSEMBLY AND USE Reflow soldering Dallas Semiconductor recommends that PowerCap Module bases experience one pass through solder reflow oriented label-side up (live-bug). Hand soldering and touch-up Do not touch soldering iron to ...

Page 11

RECOMMENDED POWERCAP MODULE LAND PATTERN RECOMMENDED POWERCAP MODULE SOLDER STENCIL INCHES PKG DIM MIN INCHES PKG DIM MIN ...

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