DS1500_11 MAXIM [Maxim Integrated Products], DS1500_11 Datasheet - Page 18

• Manufacturer Part Number: DS1500_11
• Description: Y2K Watchdog RTC with Nonvolatile Control
• Manufacturer: MAXIM [Maxim Integrated Products]

DS1500 Y2K Watchdog RTC with Nonvolatile Control
If V
is applied within the timeout period, then the system power-on sequence continues, as shown in Intervals 2
CCI
to 5 in the timing diagram. During Interval 2, PWR remains active, and IRQ is driven to its active-low level,
indicating that either TDF or KSF was set in initiating the power-on. In the diagram, KS is assumed to be pulled up
to the V
supply. Also at this time, the PAB bit is automatically cleared to 0 in response to a successful power-
BAUX
on. The PWR line remains active as long as the PAB remains cleared to 0.
At the beginning of Interval 3, the system processor has begun code execution and clears the interrupt condition of
TDF and/or KSF by writing 0s to both of these control bits. As long as no other interrupt within the DS1500 is
pending, the IRQ line is taken inactive once these bits are reset, and execution of the application software can
proceed. During this time, the wakeup and kickstart functions can be used to generate status and interrupts. TDF is
set in response to a day/date, hours, minutes, and seconds match condition. KSF is set in response to a low-going
transition on KS. If the associated interrupt-enable bit is set (TDE and/or KIE), then the IRQ line is driven low in
response to enabled event. In addition, the other possible interrupt sources within the DS1500 can cause IRQ to be
driven low. While system power is applied, the on-chip logic always attempts to drive the PWR pin active in
response to the enabled kickstart or wakeup condition. This is true even if PWR was previously inactive as the
result of power being applied by some means other than wakeup or kickstart.
The system can be powered down under software control by setting the PAB bit to 1. This causes the open-drain
PWR pin to be placed in a high-impedance state, as shown at the beginning of Interval 4 in the timing diagram. As
V
voltage decays, the IRQ output pin is placed in a high-impedance state when V
goes below V
. If the
CCI
CCI
PF
system is to be again powered on in response to a wakeup or kickstart, then both the TDF and KSF flags should be
cleared, and TPE and/or KIE should be enabled prior to setting the PAB bit.
During Interval 5, the system is fully powered down. Battery backup of the clock calendar and NV RAM is in effect
and IRQ is tri-stated, and monitoring of wakeup and kickstart takes place. If PRS = 1, PWR stays active; otherwise,
if PRS = 0, PWR is tri-stated.
SQUARE-WAVE OUTPUT
The square-wave output is enabled and disabled through the E32K bit. If the square wave is enabled (E32K = 0)
and the oscillator is running, then a 32.768kHz square wave is output on the SQW pin. If the battery-backup
32kHz-enable bit (BB32) is enabled, and voltage is applied to V
, then the 32.768kHz square wave is output on
BAUX
the SQW pin in the absence of V
.
CCI
BATTERY MONITOR
The DS1500 constantly monitors the battery voltage of the backup-battery sources (V
and V
). The battery
BAT
BAUX
low flags BLF1 and BLF2 are set to 1 if the battery voltages on V
and V
are less than 2.5V (typical);
BAT
BAUX
otherwise, BLF1 and BLF2 are 0. BLF1 monitors V
and BLF2 monitors V
.
BAT
BAUX
256 x 8 EXTENDED RAM
The DS1500 provides 256 x 8 of on-chip SRAM, which is controlled as nonvolatile storage sustained from a lithium
battery. On power-up, the RAM is taken out of write-protect status by an internal signal.
Two on-chip latch registers control access to the SRAM. One register is used to hold the SRAM address; the other
is used to hold read/write data. The SRAM address space is from 00h to FFh. The 8-bit address of the RAM
location to be accessed must be loaded into the extended RAM address register located at 10h. Data in the
addressed location can be read by performing a read operation from location 13h, or written to by performing a
write operation to location 13h. Data in any addressed location can be read or written repeatedly with changing the
address in location 10h.
To read or write consecutive extended RAM locations, a burst mode feature can be enabled to increment the
extended RAM address. To enable the burst mode feature, set the BME bit to 1. With burst mode enabled, write
the extended RAM starting address location to register 10h. Then read or write the extended RAM data from/to
register 13h. The extended RAM address locations are automatically incremented on the rising edge of OE, CS,
WE only when register 13h is being accessed (Figure 4). The address pointer wraps around after the last address
is accessed.
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