R6015ANX_12 ROHM [Rohm], R6015ANX_12 Datasheet

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R6015ANX_12

Manufacturer Part Number
R6015ANX_12
Description
Nch 600V 15A Power MOSFET
Manufacturer
ROHM [Rohm]
Datasheet
Features
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (V
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
Application
Switching Power Supply
Absolute maximum ratings (T
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (T
Junction temperature
Range of storage temperature
Reverse diode dv/dt
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
R
DS(on)
V
R6015ANX
P
DSS
I
D
(Max.)
D
Nch 600V 15A Power MOSFET
c
Parameter
= 25°C)
GSS
) guaranteed to be ±30V.
600V
0.3Ω
50W
15A
a
= 25°C)
T
T
c
c
= 25°C
= 100°C
1/13
Outline
Inner circuit
Packaging specifications
TO-220FM
Type
Symbol
I
dv/dt
D,pulse
E
E
V
V
I
I
I
T
AR
AS
AR
P
D
D
GSS
T
DSS
stg
D
Packing
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
*1
*1
j
*3
*4
*3
*5
*2
−55 to +150
(1) (2) (3)
Value
±7.0
600
±15
±60
±30
150
3.5
7.5
15
50
15
*1 Body Diode
(1) Gate
(2) Drain
(3) Source
2012.02 - Rev.B
R6015ANX
Datasheet
V/ns
Bulk
Unit
500
mJ
mJ
°C
°C
W
V
A
A
A
V
A
-
-
-

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R6015ANX_12 Summary of contents

Page 1

R6015ANX Nch 600V 15A Power MOSFET V DSS R (Max.) DS(on Features 1) Low on-resistance. 2) Fast switching speed. ) guaranteed to be ±30V. 3) Gate-source voltage (V GSS 4) Drive circuits can be simple. 5) ...

Page 2

R6015ANX Absolute maximum ratings Parameter Drain - Source voltage slope Thermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s Electrical characteristics (T Parameter Drain - Source breakdown voltage Drain - Source ...

Page 3

R6015ANX Electrical characteristics (T Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related Effective output capacitance, time related Turn - on delay time Rise time Turn - off delay time Fall time Gate Charge characteristics ...

Page 4

R6015ANX Body diode electrical characteristics (Source-Drain) (T Parameter Inverse diode continuous, forward current Inverse diode direct current, pulsed Forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient ...

Page 5

R6015ANX Electrical characteristic curves Fig.1 Power Dissipation Derating Curve 120 100 100 Junction Temperature : Tj [°C] Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 1000 T = 25ºC a 100 Single Pulse ...

Page 6

R6015ANX Electrical characteristic curves Fig.4 Avalanche Current vs Inductive Load 25º 50V , R = 25Ω 10V , ...

Page 7

R6015ANX Electrical characteristic curves Fig.7 Typical Output Characteristics(I) 10V 15 8.0V 6.5V 7. Drain - Source Voltage : V Fig 150°C Typical Output j Characteristics(I) 15 10V 12 6.0V ...

Page 8

R6015ANX Electrical characteristic curves Fig.11 Breakdown Voltage vs. Junction Temperature 900 850 800 750 700 650 600 550 500 - Junction Temperature : T Fig.13 Gate Threshold Voltage vs. Junction Temperature 10V ...

Page 9

R6015ANX Electrical characteristic curves Fig.15 Static Drain - Source On - State Resistance vs. Gate Source Voltage 0.6 0.5 0.4 0.3 0 7. Gate - Source Voltage : V Fig.17 Static Drain - ...

Page 10

R6015ANX Electrical characteristic curves Fig.18 Typical Capacitance vs. Drain - Source Voltage 10000 1000 C rss 100 25º 1MHz 0.01 0.1 1 Drain - Source Voltage : V Fig.20 ...

Page 11

R6015ANX Electrical characteristic curves Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage 100 Pulsed 125º 75º 25º −25º 0.1 0.01 ...

Page 12

R6015ANX Measurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.2-1 Gate Charge Measurement Circuit Fig.3-1 Avalanche Measurement Circuit Fig.4-1 dv/dt Measurement Circuit Fig.5-1 di/dt Measurement Circuit www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Fig.1-2 Switching Waveforms Fig.2-2 Gate Charge Waveform ...

Page 13

R6015ANX Dimensions (Unit : mm) D TO-220FM b1 e DIM Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved ...

Page 14

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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