2sb772-y Micro Commercial Components, 2sb772-y Datasheet

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2sb772-y

Manufacturer Part Number

2sb772-y

Description

To-126 Plastic-encapsulate Biploar Transistors

Manufacturer

Micro Commercial Components

Datasheet

1.2SB772-Y.pdf (2 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

2SB772-Y

Manufacturer:

SAMSUNG

Quantity:

472

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

2SB772-Y

Manufacturer:

WST

Quantity:

1 499

Current page: 1 of 2
Download datasheet (78Kb)

Revision: 4

Features

•

•

•

•

Micro Commercial Components

Electrical Characteristics @ 25

OFF CHARACTERISTICS

V

V

V

I

I

I

ON CHARACTERISTICS

h

h

V

V

SMALL-SIGNAL CHARACTERISTICS

f

CLASSIFICATION OF H

CEO

EBO

CBO

Symbol

T

FE(1)

FE(2)

(BR)CEO

(BR)CBO

(BR)EBO

CE(sat)

BE(sat)

M C C

Capable of 1.25Watts of Power Dissipation.

Collector-current 3.0A

Collector-base Voltage 40V

Operating and storage junction temperature range: -55

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Range

Rank

Collector-Emitter Breakdown Voltage

(I

Collector-Base Breakdown Voltage

(I

Emitter-Base Breakdown Voltage

(I

Collector Cutoff Current

(V

Collector Cutoff Current

(V

Emitter Cutoff Current

(V

DC Current Gain

(I

DC Current Gain

(I

Collector-Emitter Saturation Voltage

(I

(I

Transistor Frequency

(I

Base-Emitter Saturation Voltage

C

C

C

=10mAdc, I

=1.0Adc, V

=100mAdc, V

C

E

C

C

C

=100uAdc, I

=100uAdc, I

=2.0Adc, I

=2.0Adc, I

=0.1Adc, V

CB

CE

EB

=40Vdc, I

=30Vdc, I

=6.0Vdc, I

FE (1)

60-120

R

B

CE

Parameter

B

B

=0)

=0.2Adc)

=0.2Adc)

CE

=2.0Vdc)

E

B=

CE

E

C

C

=0)

=0)

=0)

=0)

=5.0Vdc, f=10MHz)

0)

=2.0Vdc)

www.mccsemi.com

TM

100-200

O

C Unless Otherwise Specified

O

omponents

20736 Marilla Street Chatsworth

!"#

$ % !"#

60

32

160-320

Min

5.0

30

40

---

---

---

---

---

50

Y

O

400

Max

---

C to +150

1.0

1.0

1.0

1 of 2

---

---

---

0.5

2.0

---

200-400

GR

Units

uAdc

uAdc

---

---

uAdc

Vdc

Vdc

Vdc

MHz

Vdc

Vdc

O

C

D

!

Plastic-Encapsulate

E

F

G

H

1

J

2

PNP Silicon

A

Transistor

2SB772-O

2SB772-Y

2SB772-GR

2SB772-R

J

3

2SB772

PIN 1.

PIN 2.

PIN 3.

B

C

EMITTER

COLLECTOR

BASE

R

L

M

2007/03/01

Q

K

N

P

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