apm4532k Anpec Electronics Corporation, apm4532k Datasheet - Page 2

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apm4532k

Manufacturer Part Number
apm4532k
Description
Dual Enhancement Mode Mosfet N-and P-channel
Manufacturer
Anpec Electronics Corporation
Datasheet

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Note:
Static Characteristics
Symbol
R
BV
V
DS(ON)
Symbol
I
I
GS(th)
DSS
GSS
R
V
V
T
DSS
I
P
I
DM
I
T
DSS
GSS
STG
D
S
D
JA
*
J
*
*
*
a
*Surface Mounted on 1in
*
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-State
Resistance
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Power Dissipation
Thermal Resistance-Junction to Ambient
Parameter
2
pad area, t
Parameter
V
V
V
V
V
V
V
V
V
V
V
GS
GS
DS
DS
DS
DS
GS
GS
GS
GS
GS
=0V, I
=0V, I
=24V, V
=-24V, V
=V
=V
=±20V, V
=10V, I
=-10V, I
=4.5V, I
=-4.5V, I
GS
GS
10sec.
(T
, I
, I
DS
DS
Test Condition
DS
DS
A
DS
DS
=250 A
=-250 A
GS
DS
(T
= 25 C unless otherwise noted)
DS
GS
=250 A
=-250 A
=5A
DS
=4A
=-3.5A
=0V
V
T
T
A
=-2.5A
=0V
=0V
GS
A
A
= 25 C unless otherwise noted)
=25°C
=100°C
=±10V
T
T
J
J
=85°C
=85°C
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Ch
P-Ch
P-Ch
N Channel
±20
1.7
30
20
5
-30
Min.
30
-55 to 150
-1
1
62.5
150
APM4532K
0.8
2
P Channel
-1.5
135
1.5
35
85
60
Typ. Max.
±20
-3.5
-1.7
-30
-14
±100
±100
150
-30
30
45
95
70
-1
-2
2
1
°C/W
Unit
°C
W
Unit
m
V
A
A
nA
V
V
A

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