apm4568k Anpec Electronics Corporation, apm4568k Datasheet - Page 3

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apm4568k

Manufacturer Part Number
apm4568k
Description
Dual Enhancement Mode Mosfet N-and P-channel
Manufacturer
Anpec Electronics Corporation
Datasheet

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APM4568K
Electrical Characteristics (Cont.)
Notes:
Copyright
Rev. B.1 - Apr., 2006
Diode Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Symbol
t
t
V
C
d(OFF)
C
C
d(ON)
R
Q
Q
Q
T
T
t
Q
SD
oss
rss
rr
iss
G
r
f
rr
gd
a : Pulse test ; pulse width 300ms, duty cycle 2%.
b : Guaranteed by design, not subject to production testing.
gs
g
a
Diode Forward Voltage
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ANPEC Electronics Corp.
Parameter
b
b
I
I
V
N-Channel
V
V
Frequency=1.0MHz
P-Channel
V
V
Frequency=1.0MHz
N-Channel
V
I
R
P-Channel
V
I
R
N-Channel
I
P-Channel
I
N-Channel
V
I
P-Channel
V
I
SD
SD
DS
DS
SD
SD
DS
DS
GS
GS
DS
GS
DS
DD
DD
DS
DS
G
G
=2A, V
=-2A, V
=1A, V
=-1A, V
=6.5A, dI
=-5A, dI
=6.5A
=-5A
=6
=6
=20V,
=-20V,
=20V, R
=-20V, R
=20V, V
=-20V, V
=0V,V
=0V,
=0V,
GS
GEN
Test Condition
DS
GS
GEN
SD
=0V
GS
SD
=0V,F=1MHz
L
=0V
GS
=20 ,
=10V,
L
/dt =100A/ s
=20 ,
=-10V,
/dt =100A/ s
=10V,
3
=-10V,
(T
A
= 25 C unless otherwise noted)
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
Min.
APM4568K
1095
Typ.
-0.8
980
110
125
0.8
3.5
3.5
75
70
16
12
19
21
30
43
11
20
19
14
12
20
20
2
8
6
3
6
www.anpec.com.tw
Max.
-1.1
1.1
30
23
35
39
55
78
12
21
28
28
Unit
nC
nC
pF
ns
ns
V

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