FQP10N60 TGS [Tiger Electronic Co.,Ltd], FQP10N60 Datasheet

FQP10N60

Manufacturer Part Number

FQP10N60

Description

600V N-Channel MOSFET

Manufacturer

TGS [Tiger Electronic Co.,Ltd]

Datasheet

1.FQP10N60.pdf (1 pages)

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DESCRIPTION

These N-Channel enhancement mode power field effect transistors are produced using Fairchild s

proprietary,planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior

switching performance, and withstand high energy pulse in the avalanche and commutation mode. These

devices are well suited for high efficiency switch mode power supplies.

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)

600V N-Channel MOSFET

ELECTRICAL CHARACTERISTICS

Drain-Source Voltage

Drain Current - Continuous

Drain Current - Pulsed

Gate-Source Voltage

Power Dissipation

Max. Operating Junction Temperature

Storage Temperature

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

Gate Threshold Voltage

Static Drain-Source On-Resistance

Drain-Source Diode Forward Voltage

Parameter

TIGER ELECTRONIC CO.,LTD

Symbol

DSS

GSS

stg

Symbol

( Ta = 25 C)

GSSR

GSSF

GS(th)

DS(on)

DSS

-55~150

DSS

Value

±30

600

156

150

9.5

Test Conditions

Unit

=600V, V

= V

= 0V, I

=30V, V

= -30V, V

= 10 V, I

= 0 V, I

, I

=250μA

= 9.5 A

=250μA

= 4.75 A

=0V

TO-220

=0V

Min.

600

2.0

—

Product specification

Typ.

0.6

—

FQP10N60

’

Max.

-100

0.73

100

1.0

4.0

1.4

—

Unit

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