RJK03B9DPA-00-J53 RENESAS [Renesas Technology Corp], RJK03B9DPA-00-J53 Datasheet

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RJK03B9DPA-00-J53

Manufacturer Part Number
RJK03B9DPA-00-J53
Description
Silicon N Channel Power MOS FET Power Switching
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RJK03B9DPA-00-J53
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
RJK03B9DPA
Silicon N Channel Power MOS FET
Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
REJ03G1791-0310 Rev.3.10 Apr 03, 2009
Page 1 of 6
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
Pb-free
Halogen-free
DS(on)
2. Value at Tch = 25 C, Rg
3. Tc = 25 C
= 8.3 m typ. (at V
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
10 s, duty cycle
Item
5
6
GS
7
= 10 V)
8
4
1%
50
3
2 1
I
D(pulse)
E
Pch
Symbol
I
ch-c
AP
AR
V
V
Tstg
Tch
I
GSS
I
DSS
DR
Note 2
D
Note 2
Note3
G
4
Note3
Note1
D
S S S
5 6 7 8
1 2 3
D D D
–55 to +150
Ratings
±20
120
150
6.4
30
30
30
25
8
5
1, 2, 3
4
5, 6, 7, 8 Drain
REJ03G1791-0310
Source
Gate
Unit
C/W
mJ
Apr 03, 2009
W
V
V
A
A
A
A
C
C
(Ta = 25°C)
Rev.3.10

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RJK03B9DPA-00-J53 Summary of contents

Page 1

... RJK03B9DPA Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 8.3 m typ. ( DS(on) GS Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK Absolute Maximum Ratings ...

Page 2

... RJK03B9DPA Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge ...

Page 3

... RJK03B9DPA Main Characteristics Power vs. Temperature Derating 100 Case Temperature Tc (°C) Typical Output Characteristics 20 4 3.0V 2 Drain to Source Voltage V Drain to Source Saturation Voltage vs. Gate to Source Voltage 400 300 200 100 Gate to Source Voltage V REJ03G1791-0310 Rev.3.10 Apr 03, 2009 ...

Page 4

... RJK03B9DPA Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 4 – Case Temperature Tc (°C) Dynamic Input Characteristics Gate Charge Qg (nc) Maximum Avalanche Energy vs. ...

Page 5

... RJK03B9DPA 0.5 0.3 0.1 0.03 0.01 Avalanche Test Circuit V DS Monitor Rg Vin 15 V Switching Time Test Circuit Vin Monitor D.U.T. Rg Vin 10 V REJ03G1791-0310 Rev.3.10 Apr 03, 2009 Page Normalized Transient Thermal Impedance vs. Pulse Width θch – c(t) = γs (t) • θch – c θch – 5.0°C/ 25°C ...

Page 6

... RJK03B9DPA Package Dimensions Package Name JEITA Package Code RENESAS Code − WPAK PWSN0008DA-A 5.1 ± 0.2 1.27Typ 0.635Max 4.9 ± 0.1 Ordering Information Part No. RJK03B9DPA-00-J53 3000 pcs REJ03G1791-0310 Rev.3.10 Apr 03, 2009 Page Previous Code MASS[Typ.] WPAKV 0.075g 0.8Max 0.04Min 0.2Typ (Ni/Pd/Au plating) Quantity Taping Unit ...

Page 7

Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained ...

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