5stp-04d4200 ABB Semiconductors, 5stp-04d4200 Datasheet

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5stp-04d4200

Manufacturer Part Number
5stp-04d4200
Description
Phase Control Thyristor
Manufacturer
ABB Semiconductors
Datasheet
• • • • Patented free-floating silicon technology
• • • • Low on-state and switching losses
• • • • Designed for traction, energy and industrial applications
• • • • Optimum power handling capability
• • • • Interdigitated amplifying gate
Blocking
Maximum rated values
Characteristic values
Mechanical data
Maximum rated values
Characteristic values
1)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Symbol
V
V
dV/dt
Parameter
Forwarde leakage current
Reverse leakage current
Parameter
Mounting force
Acceleration
Acceleration
Parameter
Weight
Surface creepage distance
Air strike distance
V
I
I
I
V
r
TAVM
TRMS
TSM
DRM,
RSM1
T
Maximum Ratings are those values beyond which damage to the device may occur
DSM
T0
crit
V
RRM
=
=
=
=
=
=
Conditions
f = 50 Hz, t
t
Exp. to 0.67 x V
p
= 5ms, single pulse
4200 V
6400 A
470 A
740 A
1.5 mΩ Ω Ω Ω
1)
1)
1 V
p
= 10ms
DRM
, T
j
= 125°C
Phase Control Thyristor
Symbol Conditions
I
I
Symbol Conditions
F
a
a
Symbol Conditions
m
D
D
DRM
RRM
M
S
a
V
V
Device unclamped
Device clamped
DRM
RRM
5STP 04D4200
, Tj = 125°C
, Tj = 125°C
5STP 04D4200 5STP 04D4000 5STP 04D3600
4200 V
4600 V
min
min
min
25
14
8
1000 V/µs
4000 V
4400 V
typ
typ
typ
0.3
10
Doc. No. 5SYA1025-04 Jan. 02
max
max
max
100
100
100
12
50
3600 V
4000 V
Unit
Unit
Unit
m/s
m/s
mm
mm
mA
mA
kN
kg
2
2

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5stp-04d4200 Summary of contents

Page 1

... Air strike distance 1) Maximum Ratings are those values beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Phase Control Thyristor 5STP 04D4200 5STP 04D4200 5STP 04D4000 5STP 04D3600 4200 V 4600 V = 125°C j Symbol Conditions ...

Page 2

On-state 1) Maximum rated values Parameter Symbol Conditions Max. average on-state I TAVM current RMS on-state current I TRMS Max. peak non-repetitive I TSM surge current 2 Limiting load integral I t Max. peak non-repetitive I TSM surge current 2 ...

Page 3

Triggering 1) Maximum rated values Parameter Symbol Conditions Peak forward gate voltage V FGM Peak forward gate current I FGM Peak reverse gate voltage V RGM Gate power loss P G Average gate power loss P GAV Characteristic values Parameter ...

Page 4

Fig. 2 On-state characteristics. Fig. 4 On-state power dissipation vs. mean on- state current. Turn - on losses excluded. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1025-04 Jan. 02 On-state characteristic model: = ...

Page 5

Fig. 6 Surge on-state current vs. pulse length. Half- sine wave. I (t) G 100 % / Fig. 8 Recommendet gate current ...

Page 6

Fig. 12 Device Outline Drawing. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abbsem.com ...

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