Mechanical Data
Electrical Characteristics
Features
Maximum Ratings
Thermal Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (Note 3) @T
Thermal Resistance, Junction to Ambient Air (Note 3) @T
Operating and Storage Temperature Range
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
•
•
•
•
•
•
•
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•
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Notes:
DS31361 Rev. 3 - 2
Epitaxial Die Construction
Ultra-Small Leadless Surface Mount Package
Ultra-low Profile (0.40mm max)
Complementary NPN Type Available (BC847BLP4)
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Case: DFN1006H4-3
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections Indicator: Collector Dot
Terminals: Finish ⎯ NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Ordering Information: See Page 3
Marking Information: See Page 3
Weight: 0.0008 grams
1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
3. Device mounted on FR-4 PCB, pad layout as shown on page 3, or Diodes Inc. suggested pad layout document AP02001 on our website at
4. Short duration pulse test used to minimize self-heating effect.
http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic (Note 4)
Characteristic
Characteristic
A
@T
= 25°C
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
A
= 25°C
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V
V
V
Symbol
V
V
V
1 of 3
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
C
BE(SAT)
BE(ON)
I
h
CBO
CBO
f
FE
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
T
BOTTOM VIEW
T
Symbol
Symbol
3
J
V
V
V
R
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, T
P
CBO
CEO
EBO
I
θ JA
C
D
-600
Min
STG
220
100
-50
-45
—
—
—
—
—
—
—
-5
1
-250
-700
-850
-670
-710
2
Typ
300
-90
3.0
—
—
—
—
—
—
DFN1006H4-3
Max
-300
-650
-750
-820
475
-4.0
-55 to +150
-15
—
—
—
—
—
—
—
Value
Value
-100
-5.0
250
500
-50
-45
BC857BLP4
BC857BLP4
MHz
Unit
mV
mV
mV
nA
µA
pF
—
V
V
V
(Internal Schematic)
3
C
TOP VIEW
Test Condition
I
I
I
V
I
I
I
I
V
V
V
V
V
f = 100MHz
V
C
C
E
C
C
C
C
CE
CE
CE
CB
CB
CE
CB
= 1μA, I
= 10μA, I
= 10mA, I
= -10mA, I
= -100mA, I
= -10mA, I
= -100mA, I
= -5.0V, I
= -5.0V, I
= -5.0V, I
= -30V
= -30V, T
= -5.0V, I
= -10V, f = 1.0MHz
C
© Diodes Incorporated
E
B
B
°C/W
B
= 0
Unit
Unit
mW
mA
B
B
°C
= 0
V
V
V
C
C
C
C
= 0
A
B
B
2
1
= -0.5mA
= -0.5mA
BC857BLP4
= -2.0mA
= -2.0mA
= -10mA
= 150°C
= -10mA,
= -5.0mA
= -5.0mA
