SFP3710G WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd], SFP3710G Datasheet

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SFP3710G

Manufacturer Part Number
SFP3710G
Description
Silicon N-Channel MOSFET
Manufacturer
WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Datasheet
Features
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,DMOS technology. This latest technology has been
especially designed to minimize on -state resistance,have a high
rugged avalanche characteristics. This devices is specially well
suited for switching regulators, switching convertors, motor and
relay drivers , and drivers for high power bipolar switching
transistor demanding high speed and low gate drive power.
Absolute Maximum Ratings
Thermal Characteristics
Rev.A Aug.2010
Symbol
Symbol
T
dv/dt
V
V
E
E
J
I
R
P
R
R
59A,100V,R
Ultra-low Gate Charge(Typical 1180nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(175℃)
T
I
,T
DSS
DM
GS
AR
D
AS
D
QJC
QCS
L
QJA
stg
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
DS(on)
(Max 18mΩ)@V
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Parameter
GS
=10V
Parameter
Silicon N-Channel MOSFET
Min
-
-
-
(Note1)
(Note1)
(Note2)
(Note3)
Value
Typ
0.5
-
-
SFP3710G
SFP3710G
SFP3710G
SFP3710G
-55~150
Value
100
240
±20
170
136
300
Max
7.4
5.8
1.3
59
42
0.92
62.5
-
Units
Units
℃/W
℃/W
℃/W
V/ ns
W/℃
mJ
mJ
W
V
A
A
A
V

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SFP3710G Summary of contents

Page 1

... Thermal Resistance , Junction -to -Case QJC R Thermal Resistance , Case-to-Sink QCS R Thermal Resistance , Junction-to -Ambient QJA Rev.A Aug.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. Silicon N-Channel MOSFET =10V GS Parameter Parameter SFP3710G SFP3710G SFP3710G SFP3710G Value Units 100 (Note1) 240 A ±20 V (Note2) 170 mJ (Note1) 7 ...

Page 2

... T =25℃ <BV ,STARTING T =25℃ DD DSS J Steady, Steady, keep keep you you advance advance Steady, keep Steady, keep you you advance advance SFP3710G SFP3710G SFP3710G SFP3710G Min Type Max Unit - - ±100 nA ± µA 100 - - V - 0.1 - V/℃ 2 ...

Page 3

... Drain Current Fig.5 On-Resistance Variation vs Junction Temperature Steady, Steady, Steady, Steady, keep Fig.2 Typical Output Characteistics Fig.4 Maximum Avalanche Energy vs Drain Current Fig.6 Gate charge Characteristics keep keep you you advance advance keep you you advance advance SFP3710G SFP3710G SFP3710G SFP3710G 3/7 ...

Page 4

... Fig.7 Maximum Safe Operation Area Fig.9 Transient Thermal Response Curve Steady, Steady, Steady, Steady, keep Fig.8 Maximum Drain current vs Case Temperature keep keep you you advance advance keep you you advance advance SFP3710G SFP3710G SFP3710G SFP3710G 4/7 ...

Page 5

... Fig.10 Gate Test circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Uncamped Inductive Switching Test Circuit & Waveform Steady, Steady, keep keep Steady, keep Steady, keep you SFP3710G SFP3710G SFP3710G SFP3710G you you advance advance you advance advance 5/7 ...

Page 6

... Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform Steady, Steady, keep keep Steady, keep Steady, keep you SFP3710G SFP3710G SFP3710G SFP3710G you you advance advance you advance advance 6/7 ...

Page 7

... TO-220 TO-220 Package Package Dimension Dimension TO-220 Package TO-220 Package Dimension Dimension Steady, Steady, keep keep you you advance advance Steady, keep Steady, keep you you advance advance SFP3710G SFP3710G SFP3710G SFP3710G Unit:mm 7/7 ...

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