M74VHC1G132DTT1G ON Semiconductor, M74VHC1G132DTT1G Datasheet - Page 2

• Manufacturer Part Number: M74VHC1G132DTT1G
• Description: IC GATE NAND SGL 2IN SCH SOT23-5
• Manufacturer: ON Semiconductor
• Series: 74VHCr

Specifications of M74VHC1G132DTT1G

• Logic Type: NAND Gate - Schmitt Trigger
• Number Of Inputs: 2
• Number Of Circuits: 1
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TSOT-23-5, TSOT-5, TSOP-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M74VHC1G132CTT1G; M74VHC1G132DTT1GOS; MC74VHC1G132DTT1GOS; MC74VHC1G132DTT1GOS

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
MAXIMUM RATINGS
Device Junction Temperature versus
Time to 0.1% Bond Failures
I
Symbol
Symbol
LATCHUP
Temperature °C
V
V
V
T
MSL
I
V
V
t
V
I
I
q
V
OUT
r
P
F
OUT
I
STG
T
T
ESD
OUT
T
OK
CC
CC
IK
CC
JA
, t
IN
IN
R
A
L
D
J
Junction
f
100
110
120
130
140
80
90
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Sink Current
DC Supply Current per Supply Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance
Power Dissipation in Still Air at 85°C
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Latchup Performance
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time, Years
Parameter
Parameter
Above V
117.8
47.9
20.4
9.4
4.2
2.0
1.0
MC74VHC1G132
http://onsemi.com
CC
and Below GND at 125°C (Note 5)
Charged Device Model (Note 4)
Human Body Model (Note 2)
2
SC70−5/SC−88A (Note 1)
Machine Model (Note 3)
Oxygen Index: 28 to 34
Figure 3. Failure Rate vs. Time Junction Temperature
V
V
CC
CC
SC70−5/SC−88A
1
= 3.3 V ± 0.3 V
= 5.0 V ± 0.5 V
1
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
TSOP−5
TSOP−5
10
TIME, YEARS
UL 94 V−0 @ 0.125 in
*55
Min
*0.5 to V
2.0
0.0
0.0
−
−
*0.5 to )7.0
*65 to )150
−0.5 to +7.0
Level 1
u2000
$12.5
Value
)150
u200
$500
$20
$25
N/A
−20
260
350
230
150
200
CC
No Limit
No Limit
)0.5
100
)125
Max
V
5.5
5.5
CC
1000
°C/W
ns/V
Unit
Unit
mW
mA
mA
mA
mA
mA
°C
°C
°C
°C
V
V
V
V
V
V
V