M74VHC1GT00DTT1G ON Semiconductor, M74VHC1GT00DTT1G Datasheet - Page 2

• Manufacturer Part Number: M74VHC1GT00DTT1G
• Description: IC GATE NAND SGL 2IN TTL SOT23-5
• Manufacturer: ON Semiconductor
• Series: 74VHCr

Specifications of M74VHC1GT00DTT1G

• Logic Type: NAND Gate
• Number Of Inputs: 2
• Number Of Circuits: 1
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 3 V ~ 5.5 V
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TSOT-23-5, TSOT-5, TSOP-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
Device Junction Temperature versus
Time to 0.1% Bond Failures
MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
I
Symbol
Symbol
LATCHUP
Temperature °C
V
V
V
T
MSL
I
V
V
t
V
I
I
q
V
OUT
r
P
F
OUT
I
STG
T
T
ESD
OUT
T
OK
CC
CC
IK
CC
JA
, t
IN
IN
R
A
L
D
J
Junction
f
100
110
120
130
140
80
90
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, V
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance
Power Dissipation in Still Air at 85_C
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Latchup Performance
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
CC
and GND
Characteristics
Characteristics
Time, Years
Above V
117.8
47.9
20.4
9.4
4.2
2.0
1.0
MC74VHC1GT00
http://onsemi.com
CC
SC70−5/SC−88A/SOT−353 (Note 1)
and Below GND at 125_C (Note 5)
Charged Device Model (Note 4)
Human Body Model (Note 2)
2
SOT23−5/TSOP−5/SC59−5
SOT23−5/TSOP−5/SC59−5
V
SC70−5/SC−88A/SOT−353
OUT
Machine Model (Note 3)
Oxygen Index: 28 to 34
Figure 3. Failure Rate vs. Time Junction Temperature
< GND; V
V
V
CC
CC
High or Low State
High or Low State
1
= 3.3 V ± 0.3 V
= 5.0 V ± 0.5 V
1
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
OUT
VCC = 0
V
CC
> V
= 0
CC
TIME, YEARS
10
UL 94 V−0 @ 0.125 in
Min
−55
3.0
0.0
0.0
0.0
−0.5 to V
0
0
*65 to )150
−0.5 to +7.0
−0.5 to +7.0
−0.5 to 7.0
Level 1
u2000
Value
)150
u200
$500
+20
+25
+50
N/A
−20
260
350
230
150
200
CC
+ 0.5
100
+125
Max
V
100
5.5
5.5
5.5
20
CC
1000
_C/W
ns/V
Unit
Unit
mW
mA
mA
mA
mA
mA
_C
_C
_C
°C
V
V
V
V
V
V
V