UNR4122 PANASONIC [Panasonic Semiconductor], UNR4122 Datasheet

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UNR4122

Manufacturer Part Number
UNR4122
Description
UNR412x Series (UN412x Series) Silicon PNP epitaxial planar type
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
Transistors with built-in Resistor
UNR412x Series
Silicon PNP epitaxial planar type
For digital circuits
■ Features
■ Resistance by Part Number
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Publication date: December 2003
• Costs can be reduced through downsizing of the equipment and
• New S type package, allowing supply with the radial taping
• UNR4121 (UN4121)
• UNR4122 (UN4122)
• UNR4123 (UN4123)
• UNR4124 (UN4124)
• UNR412X (UN412X)
• UNR412Y (UN412Y)
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base
cutoff current UNR4122/412X/412Y
(Collector open) UNR4123/4124
reduction of the number of parts.
Parameter
Parameter
UNR412X
UNR412X
UNR4121
0.27 kΩ
2.2 kΩ
4.7 kΩ
2.2 kΩ
3.1 kΩ
10 kΩ
a
Symbol
(R
= 25°C ± 3°C
V
V
Symbol
T
1
P
I
T
V
CBO
CEO
V
a
I
)
I
I
C
stg
T
CBO
CEO
EBO
j
CBO
CEO
= 25°C
−55 to +150
Rating
I
I
V
V
V
C
C
−500
−50
−50
300
150
Note) The part numbers in the parenthesis show conventional part number.
CB
CE
EB
(UN412x Series)
= −10 µA, I
= −2 mA, I
2.2 kΩ
4.7 kΩ
4.6 kΩ
10 kΩ
10 kΩ
5 kΩ
SJH00019BED
(R
= −50 V, I
= −6 V, I
= −50 V, I
2
)
Conditions
Unit
mW
B
mA
C
°C
°C
E
V
V
E
B
= 0
= 0
= 0
= 0
= 0
Internal Connection
0.45
0.75 max.
+0.20
–0.10
1
(2.5) (2.5)
B
Min
−50
−50
4.0
2
±0.2
R
R
1
2
3
Typ
2.0
±0.2
− 0.1
− 0.5
Max
−1
−1
−5
−2
−1
NS-B1 Package
C
E
0.7
1: Emitter
2: Collector
3: Base
0.45
±0.1
Unit: mm
+0.20
–0.10
Unit
mA
µA
µA
V
V
1

Related parts for UNR4122

UNR4122 Summary of contents

Page 1

... Electrical Characteristics T Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) UNR412X Collector-emitter cutoff current (Base open) UNR412X Emitter-base UNR4121 cutoff current UNR4122/412X/412Y (Collector open) UNR4123/4124 Publication date: December 2003 (UN412x Series 2.2 kΩ ...

Page 2

... UNR4123/4124 UNR412X Collector-emitter saturation voltage UNR412X UNR412Y Output voltage high-level Output voltage low-level Transition frequency Input resistance UNR4121/4124 UNR4122 UNR4123 UNR412X UNR412Y Resistance ratio UNR4124 UNR412X UNR412Y Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. ...

Page 3

... MHz = 25° − 0.1 −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR4122  −300 = 25° −250 = −1 −200 − 0.9 mA − 0.8 mA − 0.7 mA −150 − 0.6 mA − 0.5 mA −100 − 0.4 mA − 0.3 mA − 0.2 mA − ...

Page 4

UNR412x Series  MHz = 25° − 0.1 −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR4123 ...

Page 5

Characteristics charts of UNR4124  −300 = 25° −250 = −1 −200 − 0.9 mA − 0.8 mA − 0.7 mA −150 − 0.6 mA − 0.5 mA − 0.4 mA ...

Page 6

UNR412x Series  MHz = 25° −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR412Y  V ...

Page 7

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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