SKIM459GD12E4_11 SEMIKRON [Semikron International], SKIM459GD12E4_11 Datasheet

SKIM459GD12E4_11

Manufacturer Part Number

SKIM459GD12E4_11

Description

Trench IGBT Modules

Manufacturer

SEMIKRON [Semikron International]

Datasheet

1.SKIM459GD12E4_11.pdf (5 pages)

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SKiM459GD12E4

Trench IGBT Modules

SKiM459GD12E4

Features

• IGBT 4 Trench Gate Technology

• Solderless sinter technology

• V

• Low inductance case

• Isolated by Al

• Pressure contact technology for

• High short circuit capability, self limiting

• Integrated temperature sensor

Typical Applications*

• Automotive inverter

• High reliability AC inverter wind

• High reliability AC inverter drives

SKiM

coefficient

Bonded) ceramic substrate

thermal contacts and electrical

contacts

to 6 x I

CE(sat)

with positive temperature

DCB (Direct Copper

Absolute Maximum Ratings

Symbol

IGBT

Inverse diode

Module

Characteristics

Symbol

IGBT

Cnom

CRM

Fnom

FRM

FSM

t(RMS)

CES

psc

d(on)

d(off)

CES

GES

stg

isol

CE(sat)

CE0

GE(th)

off

ies

oes

res

Gint

th(j-s)

Rev. 3 – 14.07.2011

chiplevel

di/dt

Conditions

AC sinus 50 Hz, t = 1 min

Conditions

per IGBT

CRM

FRM

terminal

CES

G on

G off

= 10 ms, sin 180°, T

= 175 °C

= 450 A

= 25 °C

= 450 A

= 1200 V

= 25 V

= 800 V

≤ 15 V

= 15 V

= 0 V

= - 8 V...+ 15 V

= 600 V

off

= 3xI

≤ 1200 V

= 1.3 

= 8340 A/µs

= 3660 A/µs

= 80 °C

, I

Fnom

Cnom

= 18 mA

f = 1 MHz

= 150 °C

= 25 °C

= 150 °C

= 25 °C

= 150 °C

= 25 °C

= 150 °C

= 25 °C

= 150 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

min.

-40 ... 175

-40 ... 125

-20 ... 20

Values

26.40

1200

1350

2430

2500

2550

typ.

1.85

2.25

1.74

1.41

554

450

438

347

450

700

276

538

114

0.8

0.7

2.3

3.4

5.8

0.1

1.7

max.

0.092

2.10

2.45

0.9

0.8

2.7

3.7

6.5

0.3

Unit

K/W

m

°C

µs



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SKIM459GD12E4_11 Summary of contents

Page 1

SKiM459GD12E4 SKiM ® 93 Trench IGBT Modules SKiM459GD12E4 Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • V with positive temperature CE(sat) coefficient • Low inductance case • Isolated DCB (Direct Copper 2 3 ...

Page 2

Page 3

SKiM459GD12E4 Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off ...

Page 4

SKiM459GD12E4 Fig. 7: Typ. switching times vs Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R Fig. 10: Typ. CAL diode forward ...

Page 5

SKiM459GD12E4 SKIM 93 GD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for ...

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