SKIM606GD066HD_11 SEMIKRON [Semikron International], SKIM606GD066HD_11 Datasheet

SKIM606GD066HD_11

Manufacturer Part Number

SKIM606GD066HD_11

Description

5Trench IGBT Modules

Manufacturer

SEMIKRON [Semikron International]

Datasheet

1.SKIM606GD066HD_11.pdf (5 pages)

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SKiM606GD066HD

Trench IGBT Modules

SKiM606GD066HD

Features

• IGBT 3 Trench Gate Technology

• Solderless sinter technology

• V

• Low inductance case

• Isolated by Al

• Pressure contact technology for

• High short circuit capability, self limiting

• Integrated temperature sensor

Typical Applications*

• Automotive inverter

• High reliability AC inverter wind

• High reliability AC inverter drives

SKiM

coefficient

Bonded) ceramic substrate

thermal contacts and electrical

contacts

to 6 x I

CE(sat)

with positive temperature

DCB (Direct Copper

Absolute Maximum Ratings

Symbol

IGBT

Inverse diode

Module

Characteristics

Symbol

IGBT

Cnom

CRM

Fnom

FRM

FSM

t(RMS)

CES

psc

d(on)

d(off)

CES

GES

stg

isol

CE(sat)

CE0

GE(th)

off

ies

oes

res

Gint

th(j-s)

Rev. 3 – 14.07.2011

chiplevel

di/dt

Conditions

AC sinus 50 Hz, t = 1 min

Conditions

per IGBT

CRM

FRM

terminal

CES

G on

G off

= 10 ms, sin 180°, T

= 175 °C

= 600 A

= 25 °C

= 600 A

= 600 V

= 25 V

= 360 V

≤ 15 V

= 15 V

= 0 V

= - 8 V...+ 15 V

= 300 V

off

= 2xI

≤ 600 V

= 3 

= 5 

= 5500 A/µs

= 6200 A/µs

= 80 °C

, I

Fnom

Cnom

= 9.6 mA

f = 1 MHz

= 150 °C

= 25 °C

= 150 °C

= 25 °C

= 150 °C

= 25 °C

= 150 °C

= 25 °C

= 150 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

min.

-40 ... 175

-40 ... 125

-20 ... 20

Values

36.96

1200

2880

2500

4800

1400

typ.

1.45

1.70

0.85

2.30

1.10

600

641

512

600

453

352

600

700

150

120

0.9

1.4

5.8

0.1

0.5

max.

0.105

1.85

2.10

0.9

1.4

2.0

6.5

0.3

Unit

K/W

m

°C

µs



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SKIM606GD066HD_11 Summary of contents

Page 1

SKiM606GD066HD SKiM ® 63 Trench IGBT Modules SKiM606GD066HD Features • IGBT 3 Trench Gate Technology • Solderless sinter technology • V with positive temperature CE(sat) coefficient • Low inductance case • Isolated DCB (Direct Copper 2 3 ...

Page 2

Page 3

SKiM606GD066HD Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off ...

Page 4

SKiM606GD066HD Fig. 7: Typ. switching times vs Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R Fig. 10: Typ. CAL diode forward ...

Page 5

SKiM606GD066HD SKIM 63 GD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for ...

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