RBV1000D_05 EIC [EIC discrete Semiconductors], RBV1000D_05 Datasheet

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RBV1000D_05

Manufacturer Part Number
RBV1000D_05
Description
SILICON BRIDGE RECTIFIERS
Manufacturer
EIC [EIC discrete Semiconductors]
Datasheet
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Notes :
FEATURES :
MECHANICAL DATA :
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Page 1 of 2
RBV1000D - RBV1010D
PRV : 50 - 1000 Volts
Io : 10 Amperes
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 V
* Ideal for printed circuit board
* Very good heat dissipation
* Pb / RoHS Free
* Case : Reliable low cost construction
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.97 grams ( Approximaly )
1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at I
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
utilizing molded plastic technique
MIL-STD-202, Method 208 guaranteed
RATING
Ta = 25 °C
Ta = 100 °C
F
= 10 A
DC
SYMBOL
V
V
R
I
T
I
I
V
F(AV)
FSM
R(H)
V
I
T
RRM
RMS
I
STG
ӨJC
2
DC
R
t
F
J
SILICON BRIDGE RECTIFIERS
1000D
RBV
50
35
50
C3
Dimensions in millimeters
1001D
RBV
100
100
70
+
±0.2
10
1002D
Certificate TH97/10561QM
RBV
30 ± 0.3
200
140
200
~
±0.2
7.5
- 40 to + 150
- 40 to + 150
RBV25
~
±0.2
1004D
7.5
RBV
400
280
400
300
166
200
1.1
2.2
10
10
Rev. 04 : Decsember 12, 2005
1006D
1.0 ± 0.1
RBV
∅ 3.2 ± 0.1
600
420
600
3.9 ± 0.2
4.9 ± 0.2
2.0 ± 0.2
0.7 ± 0.1
1008D
RBV
800
560
800
Certificate TW00/17276EM
1010D
RBV
1000
1000
700
UNIT
°C/W
A
μA
μA
°C
°C
V
V
V
A
A
V
2
S

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RBV1000D_05 Summary of contents

Page 1

RBV1000D - RBV1010D PRV : 50 - 1000 Volts Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric ...

Page 2

RATING AND CHARACTERISTIC CURVES ( RBV1000D - RBV1010D ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT HEAT-SINK MOUNTING, Tc 3.2" x 3.2" x 0.12" THK. 2 (8.2cm x 8.2cm x 0.3cm) Al.- FINNED PLATE ...

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