AT403S12 Power Semiconductors, AT403S12 Datasheet

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AT403S12

Manufacturer Part Number
AT403S12
Description
PHASE CONTROL THYRISTOR
Manufacturer
Power Semiconductors
Datasheet
Symbol
I² t
V
di/dt
dv/dt
td
tq
Q rr
V
I
V
P
P
R
R
T
F
PHASE CONTROL THYRISTOR
FINAL SPECIFICATION
V
V
V
V
V
V
r
I
I
I
I
I
I rr
I
I
I
RRM
RSM
DRM
RRM
DRM
T (AV)
T (AV)
TSM
T
T(TO)
T
H
L
GT
GT
GD
FGM
FGM
RGM
GM
G
th(j-h)
th(c-h)
j
gen 03 - ISSUE : 05
BLOCKING
CONDUCTING
SWITCHING
GATE
MOUNTING
POSEICO
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Mean on-state current
Mean on-state current
Surge on-state current
I² t
On-state voltage
Threshold voltage
On-state slope resistance
Critical rate of rise of on-state current, min.
Critical rate of rise of off-state voltage, min.
Gate controlled delay time, typical
Circuit commutated turn-off time, typical
Reverse recovery charge
Peak reverse recovery current
Holding current, typical
Latching current, typical
Gate trigger voltage
Gate trigger current
Non-trigger gate voltage, min.
Peak gate voltage (forward)
Peak gate current
Peak gate voltage (reverse)
Peak gate power dissipation
Average gate power dissipation
Thermal impedance, DC
Thermal impedance
Operating junction temperature
Mounting force
Mass
Characteristic
ORDERING INFORMATION : AT403 S 12
standard specification
POSEICO SPA
POwer SEmiconductors Italian COrporation
V=VRRM
V=VDRM
180° sin, 50 Hz, Th=55°C, double side cooled
180° sin, 50 Hz, Tc=85°C, double side cooled
sine wave, 10 ms
without reverse voltage
On-state current =
From 75% VDRM up to 410 A, gate 10V 5ohm
Linear ramp up to 70% of VDRM
VD=100V, gate source 10V, 10 ohm , tr=.5 µs
dV/dt = 20 V/µs linear up to 75% VDRM
di/dt=-20 A/µs, I= 270 A
VR= 50 V
VD=5V, gate open circuit
VD=5V, tp=30µs
VD=5V
VD=5V
VD=VDRM
Pulse width 100 µs
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
Conditions
Repetitive voltage up to
Mean on-state current
Surge current
AT403
VDRM&VRRM/100
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
600 A
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
25
25
25
25
25
25
Tj
1200
400
0.850
4.9 / 5.9
1200
1300
1200
-30 / 125
1.35
0.25
400
320
125 x1E3
200
500
200
300
700
200
1.0
0.6
3.5
Value
5
30
30
20
75
95
20
55
5
8
5
1
V
A
kA
mohm
°C/kW
°C/kW
Unit
A/µs
V/µs
mA
mA
A²s
mA
mA
mA
µC
kA
kN
µs
µs
°C
W
W
V
V
V
A
A
V
V
A
V
V
V
A
V
g

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AT403S12 Summary of contents

Page 1

... POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation PHASE CONTROL THYRISTOR FINAL SPECIFICATION gen 03 - ISSUE : 05 Symbol Characteristic BLOCKING V Repetitive peak reverse voltage RRM V Non-repetitive peak reverse voltage RSM V Repetitive peak off-state voltage DRM I Repetitive peak reverse current RRM I Repetitive peak off-state current ...

Page 2

... DISSIPATION CHARACTERISTICS SQUARE WAVE 60° 90° 120° 180° 200 300 400 I [A] F(AV) 180° 120° 90° 60° 30° 200 300 400 I [A] F(AV) POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DC 500 600 DC 500 600 ...

Page 3

... DISSIPATION CHARACTERISTICS SINE WAVE 60° 90° 120° 180° 200 300 400 I [A] F(AV) 180° 120° 90° 60° 30° 200 300 400 I [A] F(AV) POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation 500 600 500 600 ...

Page 4

... If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported 1.6 2 100 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation SURGE CHARACTERISTIC Tj = 125 °C 10 n° cycles Distributed by 100 ...

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