UPC3225TB-E3

Manufacturer Part NumberUPC3225TB-E3
Description5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER
ManufacturerNEC [NEC]
UPC3225TB-E3 datasheet
 


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5 V, SILICON GERMANIUM MMIC
MEDIUM OUTPUT POWER AMPLIFIER
DESCRIPTION
µ
The
PC3225TB is a silicon germanium (SiGe) monolithic integrated circuits designed as IF amplifier for DBS
tuners. This IC is manufactured using our 50 GHz f
FEATURES
• Wideband response
: f
• Low current
: I
• Medium output power
: P
: P
• High linearity
: P
: P
• Power gain
: G
: G
• Noise Figure
: NF = 3.7 dB TYP. @ f = 0.95 GHz
: NF = 3.7 dB TYP. @ f = 2.15 GHz
• Supply voltage
: V
: input/output 50 Ω
• Port impedance
APPLICATIONS
• IF amplifiers in LNB for DBS converters etc.
ORDERING INFORMATION
Part Number
Order Number
µ
µ
PC3225TB-E3
PC3225TB-E3-A 6-pin super minimold
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark
To order evaluation samples, please contact your nearby sales office
Part number for sample order:
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10500EJ01V0DS (1st edition)
Date Published December 2004 CP(K)
Printed in Japan
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
UHS2 (Ultra High Speed Process) SiGe bipolar process.
max
= 2.8 GHz TYP. @ 3 dB bandwidth
u
= 24.5 mA TYP.
CC
= +15.5 dBm TYP. @ f = 0.95GHz
O (sat)
= +12.5 dBm TYP. @ f = 2.15 GHz
O (sat)
= +9.0 dBm TYP. @ f = 0.95 GHz
O (1dB)
= +7.0 dBm TYP. @ f = 2.15 GHz
O (1dB)
= 32.5 dB TYP. @ f = 0.95 GHz
P
= 33.5 dB TYP. @ f = 2.15 GHz
P
= 4.5 to 5.5 V
CC
Package
Marking
C3M
Embossed tape 8 mm wide.
Note
(Pb-Free)
1, 2, 3 pins face the perforation side of the tape.
Qty 3 kpcs/reel.
µ
PC3225TB.
µ
PC3225TB
Supplying Form
NEC Compound Semiconductor Devices, Ltd. 2004

UPC3225TB-E3 Summary of contents

  • Page 1

    V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION µ The PC3225TB is a silicon germanium (SiGe) monolithic integrated circuits designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz f FEATURES • Wideband ...

  • Page 2

    PIN CONNECTIONS (Top View PRODUCT LINE- V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER (T = +25° GHz out (sat) Part ...

  • Page 3

    PIN EXPLANATION Applied Pin Pin Voltage No. Name (V) − 4 INPUT 1 OUTPUT Voltage as same through external inductor 3 V 4 GND Note Pin voltage is measured at ...

  • Page 4

    ABSOLUTE MAXIMUM RATINGS Parameter Symbol Supply Voltage V Total Circuit Current I Power Dissipation P Operating Ambient Temperature T Storage Temperature T Input Power P Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED ...

  • Page 5

    OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY (T = +25° 5 out S Parameter Symbol Output intercept point OIP = 50 Ω Test Conditions f = 0.95 GHz 3 f ...

  • Page 6

    TEST CIRCUIT 6 GND 5 GND C1 4 330 pF IN The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Value Maker ...

  • Page 7

    ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD COMPONENT LIST Notes Value 1. C1 330 100 000 ...

  • Page 8

    TYPICAL CHARACTERISTICS (V CIRCUIT CURRENT vs. SUPPLY VOLTAGE 5 Supply Voltage V (V) CC POWER GAIN vs. FREQUENCY ...

  • Page 9

    INPUT RETURN LOSS vs. FREQUENCY − 4 − 8 − 12 − 16 − 1.0 2.0 3.0 Frequency f (GHz) OUTPUT RETURN LOSS vs. FREQUENCY − − 8 − 12 − 16 ...

  • Page 10

    POWER GAIN vs. FREQUENCY 150 MHz 26 − 40 − 35 − 30 − 25 − 20 − 15 Input Power P (dBm) in OUTPUT ...

  • Page 11

    OUTPUT POWER vs. INPUT POWER 150 MHz − 2 − − 6 − 8 − 40 − 35 − 30 − 25 − 20 ...

  • Page 12

    OUTPUT POWER (2 TONES) vs. INPUT POWER 500/1 501 MHz 10 0 − 10 − 20 − 30 − 40 − 50 − 60 − 45 − 40 − 35 − 30 − 25 − 20 ...

  • Page 13

    S-PARAMETERS (T = +25° −FREQUENCY −FREQUENCY 5.0 V) out START : 100.000 000 MHz STOP : 3 000.000 000 MHz 950 MHz 2 : ...

  • Page 14

    PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 14 2.1±0.1 1.25±0.1 0.1 MIN. Data Sheet PU10500EJ01V0DS µ PC3225TB ...

  • Page 15

    NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with ...

  • Page 16

    The information in this document is current as of December, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date ...

  • Page 17

    For further information, please contact NEC Compound Semiconductor Devices, Ltd. E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) Hong Kong Head Office ...