UPC8182TB-E3-AZ

Manufacturer Part NumberUPC8182TB-E3-AZ
Description3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
ManufacturerNEC [NEC]
UPC8182TB-E3-AZ datasheet
 


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MEDIUM OUTPUT POWER AMPLIFIER
FOR MOBILE COMMUNICATIONS
DESCRIPTION
µ
The
PC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC
operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.
This IC is manufactured using our 30 GHz f
process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface
from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Supply voltage: V
= 2.7 to 3.3 V
CC
• Circuit current: I
= 30 mA TYP. @ V
CC
• Medium output power: P
= +9.5 dBm TYP. @ f = 0.9 GHz
O (1dB)
• Power gain: G
= 21.5 dB TYP. @ f = 0.9 GHz
P
• Upper limit operating frequency: f
• High-density surface mounting: 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICAION
• Buffer amplifiers on 1.9 to 2.4 GHz mobile communications system
ORDERING INFORMATION (Solder Contains Lead)
Part Number
Package
µ
PC8182TB-E3
6-pin super minimold
Remark To order evaluation samples, contact you’re nearby sales office. Part number for sample order:
µ
PC8182TB
ORDERING INFORMATION (Pb-Free)
Part Number
Package
µ
PC8182TB-E3-AZ*
6-pin super minimold
*NOTE: Please refer to the last page of this data sheet, “Compliance with EU Directives” for Pb-Free RoHS
Compliance Information.
Document No. PU10206EJ01V0DS (1st edition)
(Previous No. P14543EJ2V0DS00)
Date Published December 2002 CP (K)
BIPOLAR ANALOG INTEGRATED CIRCUIT
3 V, 2.9 GHz SILICON MMIC
UHS0 (Ultra High Speed Process) silicon bipolar process. This
max
= 3.0 V
CC
P
= +9.0 dBm TYP. @ f = 1.9 GHz
O (1dB)
P
= +8.0 dBm TYP. @ f = 2.4 GHz
O (1dB)
G
= 20.5 dB TYP. @ f = 1.9 GHz
P
G
= 20.5 dB TYP. @ f = 2.4 GHz
P
= 2.9 GHz TYP. @ 3 dB bandwidth
u
Marking
C3F
• Embossed tape 8 mm wide
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel
Marking
C3F
• Embossed tape 8 mm wide
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel
µ
PC8182TB
Supplying Form
Supplying Form
©
NEC Compound Semiconductor Devices 1999,
2002

UPC8182TB-E3-AZ Summary of contents

  • Page 1

    MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION µ The PC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates The medium output power is suitable for RF-TX of mobile communications ...

  • Page 2

    PIN CONNECTIONS (Top View PRODUCT LINE- +25° dB) Part No. (GHz) (dBm) µ PC8182TB 2.9 +9 0.9 GHz +9 ...

  • Page 3

    SYSTEM APPLICATION EXAMPLE Digital cellular telephone µ : PC8182TB applicable Caution The insertion point is different due to the specifications of conjunct devices. ÷N PLL 0˚ Phase shifter 90˚ Data Sheet PU10206EJ01V0DS µ PC8182TB I DEMOD. ...

  • Page 4

    PIN EXPLANATION Applied Pin Pin No. Pin Name Voltage Voltage Note (V) (V) 1 INPUT – 0.99 4 OUTPUT Voltage – as same as V through CC external inductor 6 V 2.7 to 3.3 – GND 0 – ...

  • Page 5

    ABSOLUTE MAXIMUM RATINGS Parameter Symbol Supply Voltage V CC Total Circuit Current I CC Power Dissipation P D Operating Ambient Temperature T A Storage Temperature T stg Input Power P in Note Mounted on double-sided copper-clad 50 × 50 × ...

  • Page 6

    ELECTRICAL CHARACTERISTICS (T = +25° 3 out S Parameter Symbol Circuit Current I CC Power Gain G P Noise Figure NF Upper Limit Operating Frequency f u Isolation ISL Input ...

  • Page 7

    TEST CIRCUITS 50 Ω 000 pF COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type Value Bias Tee 1 000 Capacitor 1 000 Bias Tee 1 000 ...

  • Page 8

    ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD Top View → Mounting direction COMPONENT LIST Value C 1 000 pF L Example AMP Notes 30 × 30 × 0.4 mm double-sided ...

  • Page 9

    TYPICAL CHARACTERISTICS (T A CIRCUIT CURRENT vs. SUPPLY VOLTAGE 40 No Signal Supply Voltage V CC NOISE FIGURE, POWER GAIN vs. FREQUENCY ...

  • Page 10

    OUTPUT POWER vs. INPUT POWER + 0.9 GHz + 3 3 −5 −10 −15 −20 −25 −50 −40 −30 −20 −10 Input Power P (dBm) in ...

  • Page 11

    OUTPUT POWER vs. INPUT POWER + 3 + 0.9 GHz + 2.4 GHz f = 1.9 GHz 0 −5 −10 −15 −20 −25 −50 −40 −30 −20 −10 Input Power P (dBm) ...

  • Page 12

    SMITH CHART ( 3 out S -FREQUENCY 11 S -FREQUENCY 22 12 0.1 G 3.0 G 1.0 G 0.1 G 1.0 G 3.0 G Data Sheet PU10206EJ01V0DS µ PC8182TB ...

  • Page 13

    S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] ...

  • Page 14

    PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 14 2.1±0.1 1.25±0.1 0.1 MIN. Data Sheet PU10206EJ01V0DS µ PC8182TB ...

  • Page 15

    NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with ...

  • Page 16

    Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...