NE5510179A-T1 NEC [NEC], NE5510179A-T1 Datasheet
NE5510179A-T1
Related parts for NE5510179A-T1
NE5510179A-T1 Summary of contents
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... DQ • SINGLE SUPPLY: 2.8 to 6.0 V • SURFACE MOUNT PACKAGE: 5.7 DESCRIPTION The NE5510179A is an N-Channel silicon power MOSFET specially designed as the transmission driver amplifier for 3.5 V GSM1800 and GSM 1900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 m WSi gate lateral MOSFET) and housed in a surface mount package. ...
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... IN freq dBm 1 125 Note: C -55 to +125 1. Duty Cycle 50%, Ton = 1ms. 2. Freq = 1.9 GHz, V ORDERING INFORMATION PART NUMBER NE5510179A-T1 Note: 1. Embossed tape 12 mm wide. Gate pin face to perforations side ( the tape. 1000 100 (V) DS PARAMETERS UNITS TYP Drain to Supply Voltage V 3 ...
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... ADD Gate Through hole 0.2 33 Note: 1. Use rosin or other material to prevent solder from penetrating through-holes. NE5510179A OUTPUT POWER, DRAIN CURRENT, EFFICIENCY, AND POWER ADDED EFFICIENCY VS. GATE TO SOURCE VOLTAGE 1250 P = 30.1 dBm MAX freq = 1.9 GHz, P OUT PIN = 22 dBm I DS ...
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... TYPICAL SCATTERING PARAMETERS Note: 1. This file and many other s-parameter files can be downloaded from www.cel.com NE5510179A 200 FREQUENCY S 11 GHz MAG ANG 0.10 0.83 -121.10 0.20 0.80 -148.10 0.30 0.80 -158.20 0.40 0.81 -163.40 0.50 0.82 -166.80 0.60 0.82 -169.40 0.70 0.83 -171.40 0.80 0.85 -173.40 0.90 0.85 -175.00 1.00 0.86 -176.70 1.10 0.87 -178.40 1.20 0.88 180.00 1.30 0.88 178.00 1.40 0.89 176.50 1.50 0.89 174.90 1.60 0.90 172.90 1.70 0.90 170.90 1 ...