NE5510279A-T1 NEC [NEC], NE5510279A-T1 Datasheet

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NE5510279A-T1

Manufacturer Part Number
NE5510279A-T1
Description
3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
Manufacturer
NEC [NEC]
Datasheet
1.NE5510279A-T1.pdf (5 pages)
ELECTRICAL CHARACTERISTICS
FEATURES
• HIGH OUTPUT POWER:
• HIGH POWER ADDED EFFICIENCY:
• HIGH LINEAR GAIN:
• SURFACE MOUNT PACKAGE:
• SINGLE SUPPLY:
DESCRIPTION
The NE5510279A is an N-Channel silicon power MOSFET
specially designed as the transmission power amplifier for
3.5 V GSM1800 handsets. Dies are manufactured using NEC's
NEWMOS technology (NEC's 0.6
MOSFET) and housed in a surface mount package. This de-
vice can deliver 32 dBm output power with 45% power added
efficiency at 1.8 GHz under the 3.5 V supply voltage, or can
deliver 31 dBm output power at 2.8 V by varying the gate
voltage as a power control function.
SYMBOLS
32 dBm TYP at V
f = 1.8 GHz, P
45% TYP at V
f = 1.8 GHz, P
10 dB TYP at V
f = 1.8 GHz, P
5.7
2.8 to 6.0 V
R
BV
DS(ON)
I
I
V
gm
GSS
DSS
TH
DSS
x
5.7
x
1.1 mm MAX
Gate to Source Leakage Current
Drain to Source Leakage Current
Gate Threshold Voltage
Transconductance
Drain to Source On Resistance
Drain to Source Breakdown Voltage
PART NUMBER
PACKAGE OUTLINE
DS
IN
IN
IN
DS
= 25 dBm
= 25 dBm
= 10 dBm
= 3.5 V, I
DS
= 3.5 V, I
CHARACTERISTICS
= 3.5 V, I
DQ
POWER MOSFET FOR GSM1800
DQ
= 400 mA,
DQ
= 400 mA,
3.5 V OPERATION SILICON RF
= 400 mA,
TRANSMISSION AMPLIFIERS
m WSi gate lateral
(T
UNITS
A
nA
nA
V
S
V
-
= 25 C)
MIN
1.0
20
-
-
-
-
OUTLINE DIMENSIONS
APPLICATIONS
• DIGITAL CELLULAR PHONES
• OTHERS
TYP
1.35
1.50
0.27
Gate
24
-
-
4.2 Max
5.7 Max
California Eastern Laboratories
MAX
100
100
2.0
Source
-
-
-
0.4
PACKAGE OUTLINE 79A
0.15
V
Drain
DS
= 4.8 V, I
V
V
GS
TEST CONDITIONS
DS
DS
NE5510279A
= 6.0 V, V
= 4.8 V, I
(Units in mm)
V
V
1 = 500 mA, I
I
GSS
DSS
DSS
= 10 A
= 6.0 V
= 8.5 V
DS
NE5510279A
DS
Bottom View
1.5
= 1 mA
3.6
= 0.5 V
79A
DS
0.2
0.2
0.8 Max
2 = 700 mA
Source

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NE5510279A-T1 Summary of contents

Page 1

... SINGLE SUPPLY: 2.8 to 6.0 V DESCRIPTION The NE5510279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.5 V GSM1800 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 MOSFET) and housed in a surface mount package. This de- vice can deliver 32 dBm output power with 45% power added efficiency at 1 ...

Page 2

... ORDERING INFORMATION PART NUMBER UNITS RATINGS NE5510279A-T1 V 8.5 Note Embossed tape 12 mm wide. Gate pin faces perforation side of the A 1.0 tape. A 2.0 dBm 30 W 2.4 C 125 C -55 to +125 TEST CONDITIONS Duty Cycle 50%, Ton1ms Frequency = 1.8 GHz 3 25˚ ...

Page 3

TYPICAL PERFORMANCE CURVES DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 12.0 V MAX = Step = 1.0 V 10.0 8.0 6.0 4.0 2.0 0 Drain to Source Voltage, V OUTPUT POWER, ...

Page 4

... TYPICAL SCATTERING PARAMETERS NE5510279A 400 FREQUENCY S 11 GHz MAG ANG 0.1 0.889 -149.7 0.2 0.872 -165.4 0.3 0.871 -170.9 0.4 0.871 -173.7 0.5 0.873 -175.6 0.6 0.880 -176.9 0.7 0.884 -177.9 0.8 0.897 -179.1 0.9 0.905 -179.9 1.0 0.919 178.1 1.1 0.930 175.9 1.2 0.923 174.2 1.3 0.919 172.9 1.4 0.918 171.8 1.5 0.918 170 ...

Page 5

RECOMMENDED P.C.B. LAYOUT 4.0 1.7 Drain Source 0.5 0.5 6.1 EXCLUSIVE NORTH AMERICAN AGENT FOR CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 ...

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