NE5511279A-T1 NEC [NEC], NE5511279A-T1 Datasheet
NE5511279A-T1
Manufacturer Part Number
NE5511279A-T1
Description
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
Manufacturer
NEC [NEC]
Datasheet
1.NE5511279A-T1.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NE5511279A-T1-A
Manufacturer:
NEC
Quantity:
1 000
APPLICATIONS
ELECTRICAL CHARACTERISTICS
Notes:
• UHF RADIO SYSTEMS
• CELLULAR REPEATERS
• TWO-WAY RADIOS
• FRS/GMRS
• FIXED WIRELESS
FEATURES
• HIGH OUTPUT POWER:
• HIGH POWER ADDED EFFICIENCY:
• HIGH LINEAR GAIN:
• SURFACE MOUNT PACKAGE:
• SINGLE SUPPLY:
SYMBOL
P
P
η
η
G
G
5.7 x 5.7 x 1.1 mm MAX
V
BV
add
add
out
out
DS
L
L
η
η
I
I
P
P
V
R
G
G
GSS
g
DSS
= 15.0 dB TYP., f = 900 MHz, V
= 18.5 dB TYP., f = 460 MHz, V
I
I
DC performance is 100% tested. RF performance is tested on several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
add
add
out
D
out
D
th
m
DSS
th
= 40.5 dBm TYP., f = 460 MHz, V
= 2.8 to 8.0 V
= 40.0 dBm TYP., f = 900 MHz, V
L
L
= 48% TYP., f = 900 MHz, V
= 50% TYP., f = 460 MHz, V
Output Power
Drain Current
Power Added Effi ciency
Linear Gain
Output Power
Drain Current
Power Added Effi ciency
Linear Gain
Gate to Source Leak Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Thermal Resistance
Transconductance
Drain to Source Breakdown Voltage
PARAMETER
RF POWER SILICON LD-MOS FET
DS
DS
DS
DS
= 7.5 V,
= 7.5 V,
= 7.5 V,
= 7.5 V,
DS
DS
= 7.5 V,
= 7.5 V,
NEC'
(T
38.5
MIN
1.0
42
20
−
−
−
−
−
−
−
−
−
−
A
= 25°C)
S
TYP
40.0
15.0
40.5
2.75
18.5
7.5 V UHF BAND
2.5
1.5
2.3
48
50
24
−
−
5
OUTLINE DIMENSIONS
DESCRIPTION
NEC's NE5511279A is an N-Channel silicon power laterally
dif fused MOSFET spe cial ly designed as the transmission
power amplifi er for 7.5 V radio systems. Die are man u -
fac tured us ing NEC's NEWMOS1 tech nol o gy and housed in
a surface mount pack age. This device can deliver 40.0 dBm
output power with 48% power added effi ciency at 900 MHz
using a 7.5 V supply voltage.
MAX
100
100
2.0
Gate
−
−
−
−
−
−
−
−
−
−
−
California Eastern Laboratories
4.2 MAX.
5.7 MAX.
UNIT
°C/W
dBm
dBm
Source
dB
dB
nA
nA
%
%
A
A
V
S
V
PACKAGE OUTLINE 79A
0.4±0.15
f = 900 MHz, V
P
I
P
f = 460 MHz, V
P
I
P
V
V
V
Channel to Case
V
I
DSQ
DSQ
DSS
in
in
in
in
GS
DS
DS
DS
Drain
= 27 dBm,
= 5 dBm
= 25 dBm,
= 5 dBm
= 8.5 V
= 4.8 V, I
= 3.5 V, I
= 6.0 V
= 15 µA
= 400 mA (RF OFF)
= 400 mA (RF OFF)
TEST CONDITIONS
NE5511279A
(Units in mm)
DS
DS
DS
DS
= 1.5 mA
= 900 mA
= 7.5 V,
= 7.5 V,
Gate
(Bottom View)
1.5±0.2
Source
3.6±0.2
0.8 MAX.
Drain
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NE5511279A-T1 Summary of contents
Page 1
... DESCRIPTION NEC's NE5511279A is an N-Channel silicon power laterally dif fused MOSFET spe cial ly designed as the transmission power amplifi er for 7.5 V radio systems. Die are man u - fac tured us ing NEC's NEWMOS1 tech nol o gy and housed in a surface mount pack age. This device can deliver 40.0 dBm output power with 48% power added effi ...
Page 2
... RECOMMENDED OPERATING LIMITS °C) A SYMBOLS UNITS RATINGS °C 125 °C -55 to +125 ORDERING INFORMATION PART NUMBER NE5511279A-T1 NE5511279A-T1A Drain 0 25° out 4 100 add ...
Page 3
... NE5511279A Condition Symbol IR260 VP215 WS260 HS350-P3 08/26/2003 A Business Partner of NEC Compound Semiconductor Devices, Ltd. ...