ADG712 AD [Analog Devices], ADG712 Datasheet - Page 2

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ADG712

Manufacturer Part Number
ADG712
Description
CMOS Low Voltage 4 ohm Quad SPST Switches
Manufacturer
AD [Analog Devices]
Datasheet

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ADG711/ADG712/ADG713–SPECIFICATIONS
Parameter
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
ANALOG SWITCH
Temperature ranges are as follows: B Version: –40 C to +85 C.
Guaranteed by design, not subject to production test.
On-Resistance (R
On-Resistance Match Between
On-Resistance Flatness (R
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
t
t
Break-Before-Make Time Delay, t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth –3 dB
C
C
C
I
Analog Signal Range
ON
OFF
DD
S
D
D
I
Channels ( R
(ADG713 Only)
INL
(OFF)
, C
(OFF)
S
or I
(ON)
INH
ON
ON
)
)
D
INL
INH
S
D
(OFF)
(OFF)
, I
FLAT(ON)
S
(ON)
2
D
)
2.5
4
0.5
0.005
11
6
6
3
–58
–78
–90
200
10
10
22
0.001
+25 C
0.01
0.1
0.01
0.1
0.01
0.1
B Version
–40 C to
+85 C
0 V to V
4.5
0.05
0.3
1.0
2.4
0.8
16
10
1
1.0
0.2
0.2
0.2
0.1
–2–
DD
Units
V
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
pF typ
A typ
A max
A typ
A max
typ
max
typ
max
typ
max
1
(V
–40 C to +85 C unless otherwise noted.)
DD
= +5 V
Test Conditions/Comments
V
Test Circuit 1
V
V
V
V
Test Circuit 2
V
Test Circuit 2
V
Test Circuit 3
V
R
V
R
V
R
V
V
Test Circuit 6
R
R
Test Circuit 7
R
Test Circuit 8
R
V
Digital Inputs = 0 V or 5 V
S
S
S
DD
S
S
S
IN
L
S
L
S
L
S1
S
L
L
L
L
DD
= 0 V to V
= 0 V to V
= 0 V to V
= 4.5 V/1 V, V
= 4.5 V/1 V, V
= V
= 3 V; Test Circuit 4
= 3 V; Test Circuit 4
= 2 V; R
= 50 , C
= 300 , C
= 300 , C
= 300 , C
= 50 , C
= 50 , C
= 50 , C
= V
= V
= +5.5 V;
= +5.5 V
D
INL
S2
10%, GND = 0 V. All specifications
= 1 V, or 4.5 V;
= 3 V; Test Circuit 5
or V
S
L
= 0 , C
L
L
L
DD
DD
DD
= 5 pF, f = 10 MHz
L
L
L
= 5 pF, f = 1 MHz;
= 5 pF, f = 10 MHz;
= 5 pF; Test Circuit 9
INH
, I
, I
, I
= 35 pF,
= 35 pF,
= 35 pF,
D
D
S
S
S
= 1 V/4.5 V;
= 1 V/4.5 V;
= –10 mA;
= –10 mA
= –10 mA
L
= 1 nF;
REV. 0

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