ADG722 AD [Analog Devices], ADG722 Datasheet - Page 2

• Manufacturer Part Number: ADG722
• Description: CMOS Low Voltage 4 ohm Dual SPST Switches
• Manufacturer: AD [Analog Devices]

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ADG721/ADG722/ADG723–SPECIFICATIONS
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
Temperature ranges are as follows: B Version, –40 C to +85 C.
Guaranteed by design, not subject to production test.
DD
Analog Signal Range
On Resistance (R
On Resistance Match Between
On-Resistance Flatness (R
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
t
t
Break-Before-Make Time Delay, t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth –3 dB
C
C
C
I
ON
OFF
DD
= +5 V
S
D
D
Channels ( R
I
(ADG723 Only)
INL
(OFF)
, C
(OFF)
S
or I
(ON)
INH
10%, GND = 0 V. All specifications –40 C to +85 C, unless otherwise noted.)
ON
ON
)
)
D
INL
INH
S
D
(OFF)
(OFF)
, I
FLAT(ON)
S
(ON)
2
D
)
+25 C
4
0.3
0.85
0.005
14
6
7
2
–60
–80
–77
–97
200
7
7
18
0.001
0.01
0.25
0.01
0.25
0.01
0.25
B Version
– 40 C to
+85 C
0 V to V
5
1.0
1.5
2.4
0.8
20
10
1
1.0
0.35
0.35
0.35
0.1
–2–
DD
Units
V
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
pF typ
A typ
A max
A typ
A max
max
typ
max
typ
max
1
Test Conditions/Comments
V
Test Circuit 1
V
V
V
V
Test Circuit 2
V
Test Circuit 2
V
Test Circuit 3
V
R
V
R
V
R
V
V
Test Circuit 6
R
R
Test Circuit 7
R
R
Test Circuit 8
R
V
Digital Inputs = 0 V or 5 V
S
S
S
DD
S
S
S
IN
L
S
L
S
L
S1
S
L
L
L
L
L
DD
= 0 V to V
= 0 V to V
= 0 V to V
= 4.5 V/1 V, V
= 4.5 V/1 V, V
= V
= 3 V, Test Circuit 4
= 3 V, Test Circuit 4
= 2 V; R
= 300 , C
= 300 , C
= 300 , C
= 50 , C
= 50 , C
= 50 , C
= 50 , C
= 50 , C
= V
= V
= +5.5 V
= +5.5 V
D
INL
S2
= 1 V, or V
= 3 V, Test Circuit 5
or V
S
= 0 , C
L
L
L
L
L
DD
DD
DD
L
L
L
= 5 pF, f = 10 MHz
= 5 pF, f = 1 MHz,
= 5 pF, f = 10 MHz
= 5 pF, f = 1 MHz,
= 5 pF, Test Circuit 9
INH
, I
, I
, I
= 35 pF
= 35 pF
= 35 pF,
D
D
S
S
S
= 1 V/4.5 V
= 1 V/4.5 V
= –10 mA,
= –10 mA
= –10 mA
S
= V
L
= 1 nF,
D
= 4.5 V
REV. 0