LM4668MH NSC [National Semiconductor], LM4668MH Datasheet - Page 3

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LM4668MH

Manufacturer Part Number
LM4668MH
Description
10W High-Efficiency Mono BTL Audio Power Amplifier
Manufacturer
NSC [National Semiconductor]
Datasheet
I
I
A
P
THD+N
f
η
éN
SNR
PSRR
t
T
V
V
Symbol
DD
SD
BW
WU
SD
V
O
SDIH
SDIL
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics for the LM4668
The following specifications apply for the circuit shown in Figure 1 operating with V
unless otherwise specified. Limits apply for T
Note 1: All voltages are measured with respect to the GND pin unless otherwise specified.
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which
guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit
is given, however, the typical value is a good indication of device performance.
Note 3: The maximum power dissipation must be de-rated at elevated temperatures and is dictated by T
allowable power dissipation is P
(shown in Figure 1) with V
Note 4: Human body model, 100pF discharged through a 1.5kΩ resistor.
Note 5: Machine model, 220pF – 240pF discharged through all pins.
Note 6: Typicals are measured at 25˚C and represent the parametric norm.
Note 7: Limits are guaranteed to National’s AOQL (Average Outgoing Quality Level).
Supply Voltage
Storage Temperature
Input Voltage
Power Dissipation (Note 3)
ESD Susceptibility (Note 4)
ESD Susceptibility (Note 5)
Quiescent Power Supply Current
Shutdown Current
Amplifier Gain
Output Power
Total Harmonic Distortion + Noise P
Frequency Response Bandwith
Efficiency
Output Noise
Signal-to-Noise Ratio
Power Supply Rejection Ratio
Wake-Up time
Thermal Shutdown Temperature
Shutdown Voltage Input High
Shutdown Voltage Input Low
Parameter
DD
= 12V, R
DMAX
= (T
L
= 8Ω stereo operation, the total power dissipation is 900mW. θ
JMAX
− T
−0.3V to V
A
)/θ
−65˚C to +150˚C
Internally limited
JA
V
V
BTL output voltage with respect to input
voltage, V
THD+N = 1% (max)
THD+N = 10%, V
P
-3dB relative to the output amplitude
at 1kHz, See Figure 1
P
A-Weighted Filter, V
A-Weighted Filter, P
A
V
input referred
f = 50Hz
f = 60Hz
f = 100Hz
f = 120Hz
f = 1kHz
C
or the number given in Absolute Maximum Ratings, whichever is lower. For the LM4668 typical application
IN
SHUTDOWN
OUT
OUT
OUT
V
RIPPLE
BYPASS
(Notes 1, 2)
= 30dB
= 0V, I
A
DD
= 1W
= 6W, post filter,
= 6W, including output filter
= 25˚C.
2000V
= 20mV
+0.3V
200V
= 10µF
IN
16V
O
RMS
= GND (Note 9)
= 100mV
= 0A, R
p-p
Conditions
DD
, C
3
IN
OUT
L
= 14V
p-p
BYPASS_1
= 8Ω
= 0V
Operating Ratings
Temperature Range
Supply Voltage (Note 10)
Junction Temperature (LD and MH)
Thermal Resistance
= 6W
(Note 1)
θ
θ
T
JC
JA
MIN
≤ T
= 10µF,
A
≤ T
JMAX
JA
= 40˚C/W
MAX
, θ
JA
, and the ambient temperature T
DD
(Note 6)
Typical
20000
0.15
220
600
170
= 12V, R
0.2
30
30
10
20
79
90
79
82
85
84
75
6
LM4668
L
(Notes 7,
= 8Ω, and f
Limit
1.5
65
32
28
8)
−40˚C ≤ T
5
4
9V ≤ V
A
DD
. The maximum
www.national.com
IN
mA (max)
A
dB (max)
˚C (max)
dB (min)
(Limits)
˚C (min)
W (min)
V (max)
≤ 14.0V
V (min)
40˚C/W
Units
≤ 85˚C
= 1kHz,
2˚C/W
150˚C
mA
Hz
Hz
µV
dB
dB
ms
W
%
%

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