AT28BV64B_06

Manufacturer Part NumberAT28BV64B_06
Description64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
ManufacturerATMEL [ATMEL Corporation]
AT28BV64B_06 datasheet
 


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Features
Single 2.7V to 3.6V Supply
Hardware and Software Data Protection
Low Power Dissipation
– 15 mA Active Current
– 20 µA CMOS Standby Current
Fast Read Access Time – 200 ns
Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
– Internal Control Timer
Fast Write Cycle Times
– Page Write Cycle Time: 10 ms Maximum
– 1 to 64 Byte Page Write Operation
DATA Polling for End of Write Detection
High-reliability CMOS Technology
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
JEDEC Approved Byte-wide Pinout
Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option
1. Description
The AT28BV64B is a high-performance electrically erasable programmable read only-
memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manu-
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 200 ns with power dissipation of just 54 mW. When the device is
deselected, the CMOS standby current is less than 20 µA.
The AT28BV64B is accessed like a static RAM for the read or write cycle without the
need for external components. The device contains a 64 byte page register to allow
writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to
64 bytes of data are internally latched, freeing the address and data bus for other
operations. Following the initiation of a write cycle, the device will automatically write
the latched data using an internal control timer. The end of a write cycle can be
detected by DATA polling of I/O7. Once the end of a write cycle has been detected a
new access for a read or write can begin.
Atmel’s AT28BV64B has additional features to ensure high quality and manufactura-
bility. A software data protection mechanism guards against inadvertent writes. The
device also includes an extra 64 bytes of EEPROM for device identification or
tracking.
64K (8K x 8)
Battery-Voltage
Parallel
EEPROM
with Page Write
and Software
Data Protection
AT28BV64B
0299H–PEEPR–10/06

AT28BV64B_06 Summary of contents

  • Page 1

    ... Description The AT28BV64B is a high-performance electrically erasable programmable read only- memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manu- factured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 20 µ ...

  • Page 2

    Pin Configurations Pin Name Function A0 - A12 Addresses CE Chip Enable OE Output Enable WE Write Enable I/O0 - I/O7 Data Inputs/Outputs NC No Connect DC Don’t Connect 2.1 28-lead PDIP/SOIC Top View NC 1 A12 2 A7 ...

  • Page 3

    ... The AT28BV64B is accessed like a static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high impedance state when either high. This dual-line control gives designers flexibility in preventing bus contention in their systems ...

  • Page 4

    ... Device Identification An extra 64 bytes of EEPROM memory are available to the user for device identification. By raising A9 to 12V ± 0.5V and using address locations 7FC0H to 7FFFH, the additional bytes may be written to or read from in the same manner as the regular memory array. AT28BV64B 4 ® has incorporated both hardware and software features that will protect power-on delay – ...

  • Page 5

    DC and AC Operating Range Operating Temperature (Case) V Power Supply CC 6. Operating Modes Mode Read (2) Write Standby/Write Inhibit Write Inhibit Write Inhibit Output Disable Chip Erase Notes can ...

  • Page 6

    AC Read Characteristics Symbol Parameter t Address to Output Delay ACC ( Output Delay CE ( Output Delay OE (3)( Output Float DF t Output Hold from OE, ...

  • Page 7

    Input Test Waveforms and Measurement Level 12. Output Test Load 13. Pin Capacitance ( MHz 25°C Symbol Typ OUT Note: 1. This parameter is characterized and is not 100% ...

  • Page 8

    AC Write Characteristics Symbol Parameter Address, OE Set-up Time AS OES t Address Hold Time AH t Chip Select Set-up Time CS t Chip Select Hold Time CH t Write Pulse Width (WE or CE) WP ...

  • Page 9

    Page Mode Characteristics Symbol Parameter t Write Cycle Time WC t Address Set-up Time AS t Address Hold Time AH t Data Set-up Time DS t Data Hold Time DH t Write Pulse Width WP t Byte Load Cycle ...

  • Page 10

    Software Data Protection Write Cycle Waveforms Notes A12 must conform to the addressing sequence for the first three bytes as shown above through A12 must specify the same page address during each high to ...

  • Page 11

    Toggle Bit Characteristics Symbol Parameter t Data Hold Time Hold Time OEH ( Output Delay High Pulse OEHP t Write Recovery Time WR Notes: 1. These parameters are characterized and ...

  • Page 12

    Ordering Information 23.1 Standard Package I (mA ACC (ns) Active Standby 200 15 0.05 Note: 1. See “Valid Part Numbers” below. 23.2 Green Package Option (Pb/Halide-free) I (mA ACC (ns) Active Standby 200 15 0.05 ...

  • Page 13

    Packaging Information 25.1 32J – PLCC 1.14(0.045) X 45˚ 0.51(0.020)MAX 45˚ MAX (3X) Notes: 1. This package conforms to JEDEC reference MS-016, Variation AE. 2. Dimensions D1 and E1 do not include mold protrusion. Allowable protrusion is ...

  • Page 14

    PDIP A SEATING PLANE Notes: 1. This package conforms to JEDEC reference MS-011, Variation AB. 2. Dimensions D and E1 do not include mold Flash or Protrusion. Mold Flash or Protrusion shall not exceed ...

  • Page 15

    SOIC Dimensions in Millimeters and (Inches). Controlling dimension: Millimeters. 2325 Orchard Parkway San Jose, CA 95131 R 0299H–PEEPR–10/06 0.51(0.020) 0.33(0.013) 7.60(0.2992) 7.40(0.2914) PIN 1 1.27(0.50) BSC TOP VIEW 18.10(0.7125) 17.70(0.6969) 0.30(0.0118) 0.10(0.0040) 0º ~ 8º 1.27(0.050) 0.40(0.016) ...

  • Page 16

    TSOP Pin 1 Identifier Area e E Notes: 1. This package conforms to JEDEC reference MO-183. 2. Dimensions D1 and E do not include mold protrusion. Allowable protrusion 0.15 mm per side and on ...

  • Page 17

    ... Atmel Corporation. All rights reserved. Atmel marks or trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be trademarks of others. Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 ...